RFD16N06LE Todos los transistores

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RFD16N06LE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFD16N06LE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 16 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.047 Ohm

Empaquetado / Estuche: TO251AA

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RFD16N06LE Datasheet (PDF)

1.1. rfd16n06lesm.pdf Size:193K _fairchild_semi

RFD16N06LE
RFD16N06LE

 RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs • 16A, 60V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.047Ω a modern process. This process, which uses feature sizes • Temperature Compensating PSPICE® Model approaching those of LSI integrated circuits gives optimum utilization of silicon, resu

3.1. rfd16n05-sm.pdf Size:228K _fairchild_semi

RFD16N06LE
RFD16N06LE

RFD16N05, RFD16N05SM Data Sheet November 2003 16A, 50V, 0.047 Ohm, N-Channel Power Features MOSFETs • 16A, 50V The RFD16N05 and RFD16N05SM N-channel power • rDS(ON) = 0.047Ω MOSFETs are manufactured using the MegaFET process. • Temperature Compensating PSPICE® Model This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilizati

3.2. rfd16n05l-lsm.pdf Size:161K _fairchild_semi

RFD16N06LE
RFD16N06LE

RFD16N05L, RFD16N05LSM Data Sheet December 2003 16A, 50V, 0.047 Ohm, Logic Level, Features N-Channel Power MOSFETs • 16A, 50V These are N-Channel logic level power MOSFETs • rDS(ON) = 0.047Ω manufactured using the MegaFET process. This process, • UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum utilizati

3.3. rfd16n03l-sm.pdf Size:91K _harris_semi

RFD16N06LE
RFD16N06LE

RFD16N03L, S E M I C O N D U C T O R RFD16N03LSM 16A, 30V, Avalanche Rated N-Channel Logic Level December 1995 Enhancement-Mode Power MOSFETs Features Packaging JEDEC TO-251AA • 16A, 30V SOURCE • rDS(ON) = 0.022Ω DRAIN GATE • Temperature Compensating PSPICE Model DRAIN (FLANGE) • Can be Driven Directly from CMOS, NMOS, and TTL Circuits • Peak Current vs Pulse Width C

Otros transistores... RFD15P06 , RFD15P06SM , RFD16N03L , RFD16N03LSM , RFD16N05 , RFD16N05L , RFD16N05LSM , RFD16N05SM , IRF540 , RFD16N06LESM , RFD3055 , RFD3055LE , RFD3055LESM , RFD3055SM , RFD3N08L , RFD3N08LSM , RFD4N06L .

 


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