RDD020N60 Todos los transistores

 ..1. Size:534K  rohm
 rdd020n60.pdf

Data Sheet 10V Drive Nch MOSFET RDD020N60 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 6.5 (SC-63) 5.1 2.3 0.5 Features 1) Low on-resistance. 2) High-speed switching. 0.75 3) Wide range of SOA. 0.65 (1) Gate 0.9 2.3 (1) (2) (3) 4) Drive circuits can be simple. (2) Drain 2.3 0.5 1.0 (3) Source 5) Parallel use is easy. Applicati

 9.1. Size:604K  rohm
 rdd022n50.pdf

RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V CPT3 (SC-63) RDS(on) (Max.) 5.4W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy.

 9.2. Size:754K  rohm
 rdd022n60.pdf

RDD022N60 Nch 600V 2A Power MOSFET Datasheet lOutline VDSS 600V CPT3 (SC-63) RDS(on) (Max.) 6.7W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy.

 9.3. Size:606K  rohm
 rdd023n50.pdf

RDD023N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V CPT3 (SC-63) RDS(on) (Max.) 5.4W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy.