RFD3055LE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RFD3055LE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 38 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 105 nS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.107 Ohm
Encapsulados: TO251AA
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RFD3055LE datasheet
rfd3055le rfd3055lesm rfp3055le.pdf
RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs 11A, 60V These N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those of LSI
rfd3055le rfd3055lesm.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
rfd3055-sm rfp3055.pdf
RFD3055, RFD3055SM S E M I C O N D U C T O R RFP3055 12A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB 12A, 60V TOP VIEW rDS(ON) = 0.150 SOURCE Temperature Compensating PSPICE Model DRAIN Peak Current vs Pulse Width Curve GATE UIS Rating Curve +175oC Operating Temperature JED
Otros transistores... RFD16N03LSM, RFD16N05, RFD16N05L, RFD16N05LSM, RFD16N05SM, RFD16N06LE, RFD16N06LESM, RFD3055, IRF540, RFD3055LESM, RFD3055SM, RFD3N08L, RFD3N08LSM, RFD4N06L, RFD4N06LSM, RFD7N10LE, RFD7N10LESM
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