R6009ENJ Todos los transistores

 ..1. Size:784K  rohm
 r6009enj.pdf

R6009ENJ Nch 600V 9A Power MOSFET Data Sheet lOutline (2) VDSS 600V LPT(S) (SC-83) RDS(on) (Max.) 0.535W ID 9A (1) PD 40W (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-fr

 ..2. Size:255K  inchange semiconductor
 r6009enj.pdf

isc N-Channel MOSFET Transistor R6009ENJ FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 7.1. Size:812K  rohm
 r6009enx.pdf

R6009ENX Nch 600V 9A Power MOSFET Data Sheet lOutline VDSS 600V TO-220FM RDS(on) (Max.) 0.535W ID 9 (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 20V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy. 6) Pb-free lead p

 7.2. Size:252K  inchange semiconductor
 r6009enx.pdf

isc N-Channel MOSFET Transistor R6009ENX FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:1480K  rohm
 r6009jnd3.pdf

R6009JND3 Datasheet Nch 600V 9A Power MOSFET lOutline l TO-252 VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 125W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

 9.2. Size:1440K  rohm
 r6009knx.pdf

R6009KNX Datasheet Nch 600V 9A Power MOSFET lOutline l VDSS 600V RDS(on)(Max.) 0.535 TO-220FM ID 9A PD 48W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Packing Bulk Reel size (mm) - lApp

 9.3. Size:1211K  rohm
 r6009knj.pdf

R6009KNJ Datasheet Nch 600V 9A Power MOSFET lOutline l TO-263 VDSS 600V SC-83 RDS(on)(Max.) 0.535 LPT(S) ID 9A PD 94W lInner circuit l lFeatures l 1) Low on-resistance. 2) Ultra fast switching speed. 3) Parallel use is easy. 4) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embossed Packing T

 9.4. Size:2104K  rohm
 r6009jnx.pdf

R6009JNX Datasheet Nch 600V 9A Power MOSFET lOutline l TO-220FM VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 53W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPa

 9.5. Size:1486K  rohm
 r6009jnj.pdf

R6009JNJ Datasheet Nch 600V 9A Power MOSFET lOutline l LPT(S) VDSS 600V RDS(on)(Max.) 0.585 ID 9A PD 125W lFeatures l lInner circuit l 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant lApplication l lPac

 9.6. Size:266K  inchange semiconductor
 r6009jnd3.pdf

isc N-Channel MOSFET Transistor R6009JND3 FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.7. Size:252K  inchange semiconductor
 r6009knx.pdf

isc N-Channel MOSFET Transistor R6009KNX FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.8. Size:255K  inchange semiconductor
 r6009knj.pdf

isc N-Channel MOSFET Transistor R6009KNJ FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 535m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.9. Size:252K  inchange semiconductor
 r6009jnx.pdf

isc N-Channel MOSFET Transistor R6009JNX FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.10. Size:255K  inchange semiconductor
 r6009jnj.pdf

isc N-Channel MOSFET Transistor R6009JNJ FEATURES Drain Current I =9A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 585m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose