2SK1282 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK1283SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX.solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.18 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 MAX. (VGS = 4 V, ID = 2

DATA SHEETN-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR2SK1285SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX.3.2 0.2 2.8 MAX.FEATURES Low on-state resistance RDS(on) = 0.32 MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 MAX.

FUJI POWER MOSFET2SK1280N-CHANNEL SILICON POWER MOSFETF- V SERIESFeatures Outline DrawingsInclude fast recovery diodeTO-3PHigh voltageLow driving powerApplications Motor controllersInverters Choppers3. SourceJEDECSC-65EIAJMaximum ratings and characteristicsEquivalent circuit schematic Absolute maximum ratings ( Tc=25C unless otherwise specified)Item Sym

SMD Type ICSMD Type MOSFETN-Channel MOSFET2SK1284-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.8Features0.50 -0.7Low on-state resistanceRDS(on) 0.32 .@VGS=10V,ID=2ARDS(on) 0.40 @VGS=4V,ID=2A0.127+0.10.80-0.1maxLow Ciss Ciss=500pF TYP.Built-in G-S Gate Protection Diode+ 0.11 Gate2.3 0.60- 0.1+0.154 .60 -0.152 Drain3 SourceA

isc N-Channel MOSFET Transistor 2SK1280DESCRIPTIONDrain Current I = 18A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV