BSC0906NS MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BSC0906NS
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 63 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Encapsulados: TDSON-8
Búsqueda de reemplazo de BSC0906NS MOSFET
- Selecciónⓘ de transistores por parámetros
BSC0906NS datasheet
bsc0906ns.pdf
n-Channel Power MOSFET OptiMOS BSC0906NS Data Sheet 2.0, 2011-06-10 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0906NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS
bsc0902ns.pdf
BSC0902NS OptiMOSTM Power-MOSFET Product Summary Features VDS 30 V Optimized for high performance Buck converter RDS(on),max 2.6 mW Very low on-resistance R @ V =4.5 V DS(on) GS ID 100 A 100% avalanche tested QOSS 16 nC Superior thermal resistance QG(0V..10V) 26 nC N-channel Qualified according to JEDEC1) for target applications PG-TDSON-8
bsc090n03lsg.pdf
BSC090N03LS G OptiMOS 3 Power-MOSFET Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 48 A Qualified according to JEDEC1) for target applications PG-TDSON-8 N-channel; Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Superio
bsc0901ns bsc0901ns .pdf
n-Channel Power MOSFET OptiMOS BSC0901NS Data Sheet 2.1, 2011-09-23 Final Industrial & Multimarket OptiMOS Power-MOSFET BSC0901NS 1 Description OptiMOS 30V products are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make OptiMOS
Otros transistores... R6047ENZ1 , R6076ENZ1 , R8005ANX , R8010ANX , R9521 , R9522 , 2SJ455 , 2SK0123 , 20N60 , IPD09N03LA , IPF09N03LA , IPS09N03LA , IPU09N03LA , NTD4809NH , NTD4809NHG , SI2300A , SPP07N60C2 .
History: R6035ENZ1
History: R6035ENZ1
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