IPD09N03LA Todos los transistores

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 ipd09n03la ipf09n03la ips09n03la ipu09n03la.pdf

IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R (SMD version) 8.6 m DS(on),max Qualified according to JEDEC1) for target application I 50 A D N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Superior thermal resistance 175 C

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 ipd090n03lg ipf090n03lg ips090n03lg ipu090n03lg.pdf

Type IPD090N03L G IPF090N03L G IPS090N03L G IPU090N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 9 m DS(on),max Optimized technology for DC/DC converters I 40 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low

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 ipd096n08n3.pdf

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 ipd090n03lg6.pdf

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 9.4. Size:750K  infineon
 ipd090n03lge8177.pdf

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval

 9.5. Size:668K  infineon
 ipd090n03lg .pdf

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 9.6. Size:712K  infineon
 ipd090n03l.pdf

Type IPD090N03L G E8177 OptiMOS 3 Power-Transistor Product Summary Features VDS 30 V Fast switching MOSFET for SMPS RDS(on),max 9 mW Optimized technology for DC/DC converters ID 40 A Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) Aval

 9.7. Size:1347K  infineon
 ipd090n03lg9.pdf

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 ipd096n08n3g.pdf

IPD096N08N3 G OptiMOS(TM)3 Power-Transistor Product Summary Features VDS 80 V Ideal for high frequency switching RDS(on),max 9.6 mW Optimized technology for DC/DC converters ID 73 A Excellent gate charge x R product (FOM) DS(on) N-channel, normal level 100% avalanche tested Pb-free plating; RoHS compliant Qualified according to JEDEC1) for target

 9.9. Size:243K  inchange semiconductor
 ipd096n08n3.pdf

isc N-Channel MOSFET Transistor IPD096N08N3,IIPD096N08N3 FEATURES Static drain-source on-resistance RDS(on) 9.6m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High frequency switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 80

 9.10. Size:242K  inchange semiconductor
 ipd090n03l.pdf

isc N-Channel MOSFET Transistor IPD090N03L, IIPD090N03L FEATURES Static drain-source on-resistance RDS(on) 9m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 30 V DSS V Ga