SPB07N60C2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SPP07N60C2, SPB07N60C2 Final data SPA07N60C2 Cool MOS Power Transistor Feature Product Summary New revolutionary high voltage technology VDS @ Tjmax 650 V Ultra low gate charge RDS(on) 0.6 Periodic avalanche rated ID 7.3 A Extreme dv/dt rated Ultra low effective capacitances P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 3 2 1 P-TO220-3-31 Type Package Orderi

SPB07N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPB07N60C3 PG-TO263 Q67040-S4394 07N60C3 Maximum Ratings P

Isc N-Channel MOSFET Transistor SPB07N60C3 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo

SPB07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A PG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking 07N60S5 SPB07N60S5 PG-TO263 Q67040-S4185 Maximum Ratings Par

Isc N-Channel MOSFET Transistor SPB07N60S5 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vo