SIS472DN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SIS472DN
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
   Paquete / Cubierta: 1212-8

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SIS472DN Datasheet (PDF)

..1. Size:559K vishay
sis472dn.pdf

SiS472DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a, g Qg (Typ.)Definition 0.0089 at VGS = 10 V 20 TrenchFET Power MOSFET30 9.8 nC0.0124 at VGS = 4.5 V 20 Optimized for High-Side SynchronousRectifier Operation 100 % Rg TestedPowerPAK 1212-8 100 % UI

8.1. Size:231K vishay
sis472bdn.pdf

SiS472BDNwww.vishay.comVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPowerPAK 1212-8 SingleD TrenchFET Gen IV power MOSFETD8D7 100 % Rg and UIS testedD65 Material categorization:for definitions of compliance please see www.vishay.com/doc?99912112SSAPPLICATIONS3SD4S1G DC/DC power suppliesTop View Bottom View

8.2. Size:561K vishay
sis472adn.pdf

SiS472ADNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A)a, g Qg (Typ.) Optimized for High-Side SynchronousRectifier Operation0.0085 at VGS = 10 V 2430 12.8 nC 100 % Rg and UIS Tested0.0105 at VGS = 4.5 V 24 Material categorization:For definitions of compliance please see P

9.1. Size:574K vishay
sis476dn.pdf

New ProductSiS476DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () (Max.) ID (A)f Qg (Typ.)Definition0.0025 at VGS = 10 V 40g TrenchFET Gen IV Power MOSFET30 22.5 nC0.0035 at VGS = 4.5 V 40g 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212

9.2. Size:545K vishay
sis478dn.pdf

New ProductSiS478DNVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.) Definition TrenchFET Power MOSFET0.020 at VGS = 10 V 1230 3.6 nC 100 % Rg Tested0.030 at VGS = 4.5 V 12 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECPowerPAK 1212-8

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AM7442N

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