SISA12DN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SISA12DN
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 22 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 600 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm
Paquete / Cubierta: 1212-8
Búsqueda de reemplazo de SISA12DN MOSFET
SISA12DN datasheet
sisa12dn.pdf
New Product SiSA12DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) Definition TrenchFET Gen IV Power MOSFET 0.0043 at VGS = 10 V 25 30 13.6 nC 100 % Rg and UIS Tested 0.0060 at VGS = 4.5 V 25 Compliant to RoHS Directive 2002/95/EC APPLICAT... See More ⇒
sisa12adn.pdf
New Product SiSA12ADN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)a, g Qg (Typ.) 100 % Rg and UIS Tested 0.0043 at VGS = 10 V 25 Material categorization 30 13.6 nC 0.0060 at VGS = 4.5 V For definitions of compliance please see 25 www.vishay.com/doc?99912 PowerPAK ... See More ⇒
sisa14dn.pdf
SiSA14DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f, g Qg (Typ.) 100 % Rg and UIS Tested 0.00510 at VGS = 10 V Material categorization 30 20 9.4 nC 0.00850 at VGS = 4.5 V For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8 APPLICATIONS D... See More ⇒
sisa18dn.pdf
New Product SiSA18DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Gen IV Power MOSFET VDS (V) RDS(on) ( ) (Max.) ID (A)f Qg (Typ.) 100 % Rg and UIS Tested 0.0075 at VGS = 10 V 38.3 Material categorization 30 6.9 nC 0.0120 at VGS = 4.5 V 30.2 For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK 1212-8 ... See More ⇒
Otros transistores... SIS890DN , SIS892ADN , SIS892DN , SIS902DN , SIS990DN , SISA04DN , SISA10DN , SISA12ADN , IRFP064N , SISA14DN , SISA18ADN , SISA18DN , SISS23DN , SISS40DN , SIX3439K , SIZ300DT , SIZ340DT .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP90N03GD | AP85P04G | AP85N04Q | AP85N04K | AP85N04G | AP80P04K | AP80N06T | AP80N06H | AP80N06DH | AP7N10K | AP75N04K | AP70P03K | AP70N100K | AP6900 | AP6802 | AP6800
Popular searches
irf9540n | bd139 datasheet | irf9640 | 2n3053 | a1015 | mpsa42 | 2n5551 transistor | a1015 transistor