2SK1871 Todos los transistores

 ..1. Size:199K  no
 2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf

 8.1. Size:287K  toshiba
 2sk1875.pdf

2SK1875 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK1875 High Frequency Amplifier Applications Unit mm AM High Frequency Amplifier Applications Audio Frequency Amplifier Applications High Yfs Yfs = 25 mS (typ.) Low C C = 7.5 pF (typ.) iss iss Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Gate-drain voltage

 8.2. Size:199K  fuji
 2sk1876.pdf

 8.3. Size:622K  hitachi
 2sk187.pdf

 8.4. Size:220K  inchange semiconductor
 2sk1876.pdf

isc N-Channel MOSFET Transistor 2SK1876 DESCRIPTION Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Fast Switching Speed Low on-resistance For switchinggregulator,DC-DC Converter Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.5. Size:54K  inchange semiconductor
 2sk1879.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1879 DESCRIPTION Drain Current ID=45A@ TC=25 Drain Source Voltage- VDSS= 60V(Min) Fast Switching Speed APPLICATIONS Switching power supply ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage 30 V I