2SK2153 Todos los transistores

 ..1. Size:199K  no
 2sk1871 2sk2153 2sk2164 2sk2321 2sk2432 2sk2435 2sk2436 2sk2438 2sk2439 2sk2626 2sk2634 2sk2635 2sk2636 2sk2637 2sk2773.pdf

 8.1. Size:60K  1
 2sk2157.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2157 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2157 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS (in mm) is a switching element that can be directly driven by the output of 5.7 0.1 an IC operating at 5 V. This product has a low ON resistance and 1.5 0.1 2.0 0.2 superb switching characteristics and is ideal fo

 8.2. Size:486K  toshiba
 2sk2150.pdf

 8.3. Size:95K  sanyo
 2sk2151.pdf

Ordering number ENN4568A N-Channel Silicon MOSFET 2SK2151 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2151] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta

 8.4. Size:87K  sanyo
 2sk2154.pdf

Ordering number ENN4689 N-Channel Silicon MOSFET 2SK2154 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SK2154] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SK2154] 6.5 2.3 5.0 0.5 4 0.5

 8.5. Size:93K  sanyo
 2sk2152.pdf

Ordering number ENN4569A N-Channel Silicon MOSFET 2SK2152 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2152] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source SANYO PCP (Bottom View) Specifications Absolute Maximum Ratings at Ta

 8.6. Size:213K  renesas
 2sk2157c.pdf

Preliminary Data Sheet 2SK2157C R07DS1264EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jun 18, 2015 Description The 2SK2157C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 2.5 V power source. Features Directly driven by a 2.5 V power source. Low on-state resistance RDS(on)1 = 63 m MAX. (VGS = 4

 8.7. Size:71K  renesas
 rej03g0903 2sk213 2sk214 2sk215 2sk216 a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:42K  nec
 2sk2159.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featur- PACKAGE DIMENSIONS ing an operating voltage as low as 1.5 V. Because it can be (in millimeters) driven on a low voltage and it is not necessary to consider 4.5 0.1 driving current, the 2SK2159 is suitable for driving actuators of 1.6

 8.9. Size:60K  nec
 2sk2158.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2158 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2158 is an N-channel vertical type MOS FET featur- PACKAGE DIMENSIONS ing an operating voltage as low as 1.5 V. Because it can be (in millimeters) driven on a low voltage and it is not necessary to consider 2.8 0.2 driving current, the 2SK2158 is suitable for use in low-voltage 1.5 0.

 8.10. Size:33K  hitachi
 2sk213 2sk214 2sk215 2sk216.pdf

2SK213, 2SK214, 2SK215, 2SK216 Silicon N-Channel MOS FET Application High frequency and low frequency power amplifier, high speed switching. Complementary pair with 2SJ76, J77, J78, J79 Features Suitable for direct mounting High forward transfer admittance Excellent frequency response Enhancement-mode Outline TO-220AB 1 D 2 3 1. Gate G 2. Source (Flange) 3. D

 8.11. Size:1013K  kexin
 2sk2159.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2159 1.70 0.1 Features VDS (V) = 60V ID = 2 A D 0.42 0.1 0.46 0.1 RDS(ON) 0.3 (VGS = 4V) RDS(ON) 0.5 (VGS = 2.5V) Internal diode 1.Gate G 2.Drain Gate protection diode 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage

 8.12. Size:672K  cn shikues
 2sk2158.pdf

 8.13. Size:853K  cn vbsemi
 2sk2159.pdf

2SK2159 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no

 8.14. Size:1269K  cn vbsemi
 2sk2158-t1b.pdf

2SK2158-T1B www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G

 8.15. Size:221K  inchange semiconductor
 2sk2150.pdf

isc N-Channel MOSFET Transistor 2SK2150 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra