2SK2317 Todos los transistores

 

2SK2317 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2317
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 20 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 10 V
   Corriente continua de drenaje |Id|: 4 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 0.5 V
   Tiempo de subida (tr): 70 nS
   Conductancia de drenaje-sustrato (Cd): 300 pF
   Resistencia entre drenaje y fuente RDS(on): 0.085 Ohm
   Paquete / Cubierta: TP

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2SK2317 Datasheet (PDF)

 ..1. Size:131K  sanyo
2sk2317.pdf

2SK2317
2SK2317

Ordering number:ENN5058N-Channel Silicon MOSFET2SK2317Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 2.5V drive.[2SK2317]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2317]6.5 2.35.0 0.540.50.85

 8.1. Size:449K  toshiba
2sk2313.pdf

2SK2317
2SK2317

2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 8 m (typ.) High forward transfer admittance : |Yfs| = 60 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

 8.2. Size:426K  toshiba
2sk2314.pdf

2SK2317
2SK2317

2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 66 m (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 100 V) Enhancement mode

 8.3. Size:423K  toshiba
2sk2311.pdf

2SK2317
2SK2317

2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit: mm Regulator Applications 4 V gate drive Low drain-source ON resistance : R = 36 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS En

 8.4. Size:390K  toshiba
2sk2312.pdf

2SK2317
2SK2317

2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

 8.5. Size:95K  sanyo
2sk2318.pdf

2SK2317
2SK2317

 8.6. Size:145K  sanyo
2sk2316.pdf

2SK2317
2SK2317

Ordering number : EN5300AN-Channel Silicon MOSFET2SK2316Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON resistance.unit: mm Ultrahigh-speed switching.2062A-PCP Low-voltage drive (2.5V drive).[2SK2316]1 : Gate2 : Drain3 : SourceSANYO: PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition

 8.7. Size:77K  renesas
2sk2315.pdf

2SK2317
2SK2317

Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to

 8.8. Size:264K  inchange semiconductor
2sk2313.pdf

2SK2317
2SK2317

isc N-Channel MOSFET Transistor 2SK2313DESCRIPTIONDrain Current ID=60A@ TC=25Drain Source Voltage-: VDSS=60V(Min)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,Chopper regulator,DC-DC converter and motor driv

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