2SK2318 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2318
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 10 V
Corriente continua de drenaje |Id|: 12 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 135 nS
Conductancia de drenaje-sustrato (Cd): 750 pF
Resistencia entre drenaje y fuente RDS(on): 0.038 Ohm
Paquete / Cubierta: TP
Búsqueda de reemplazo de MOSFET 2SK2318
2SK2318 Datasheet (PDF)
2sk2313.pdf
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2SK2313 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2313 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 8 m (typ.) High forward transfer admittance : |Yfs| = 60 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :
2sk2314.pdf
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2SK2314 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2314 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 66 m (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 100 V) Enhancement mode
2sk2311.pdf
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2SK2311 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2311 Chopper Regulator, DC-DC Converter and Switching Unit: mm Regulator Applications 4 V gate drive Low drain-source ON resistance : R = 36 m (typ.) DS (ON) High forward transfer admittance : |Y | = 16 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS En
2sk2312.pdf
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2SK2312 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2312 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :
2sk2316.pdf
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Ordering number : EN5300AN-Channel Silicon MOSFET2SK2316Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON resistance.unit: mm Ultrahigh-speed switching.2062A-PCP Low-voltage drive (2.5V drive).[2SK2316]1 : Gate2 : Drain3 : SourceSANYO: PCP(Bottom View)SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Condition
2sk2317.pdf
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Ordering number:ENN5058N-Channel Silicon MOSFET2SK2317Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B 2.5V drive.[2SK2317]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2317]6.5 2.35.0 0.540.50.85
2sk2315.pdf
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Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm the latest product information with a Renesas Electronics sales office. Also, please pay regular and careful attention to
2sk2313.pdf
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isc N-Channel MOSFET Transistor 2SK2313DESCRIPTIONDrain Current ID=60A@ TC=25Drain Source Voltage-: VDSS=60V(Min)Fast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for low voltage,high speed applications,Chopper regulator,DC-DC converter and motor driv
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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![2SK2318](https://alltransistors.com/images/es.png)
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