2SK2556 Todos los transistores

 ..1. Size:389K  sanyo
 2sk2556.pdf

 8.1. Size:385K  toshiba
 2sk2551.pdf

2SK2551 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2551 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 7.2 m (typ.) High forward transfer admittance Y = 50 S (typ.) fs Low leakage current I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode Vth = 1.5 3.0 V

 8.2. Size:137K  toshiba
 2sk2550.pdf

2SK2550 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2550 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V (

 8.3. Size:42K  sanyo
 2sk2555.pdf

Ordering number ENN5316A N-Channel Silicon MOSFET 2SK2555 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2083B 4V drive. [2SK2555] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK2555] 6.5 2.3 5.0 0.5 4 0.5 0.85

 8.4. Size:109K  renesas
 rej03g1015 2sk2553lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:90K  renesas
 2sk2554.pdf

2SK2554 Silicon N Channel MOS FET REJ03G1016-0600 (Previous ADE-208-359D) Rev.6.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 4.5 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (

 8.6. Size:96K  renesas
 2sk2553.pdf

2SK2553(L), 2SK2553(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1015-1000 (Previous ADE-208-357H) Rev.10.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS

 8.7. Size:103K  renesas
 rej03g1016 2sk2554ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:240K  nec
 2sk2552.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.