2SK2773 Todos los transistores

 

2SK2773 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2773
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.37 Ohm
   Paquete / Cubierta: ZP

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2SK2773 Datasheet (PDF)

 8.1. Size:95K  1
2sk2778 2sk2779.pdf

2SK2773
2SK2773

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 2502SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

 8.2. Size:444K  toshiba
2sk2776.pdf

2SK2773
2SK2773

2SK2776 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2776 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications Low drain-source ON-resistance : RDS (ON) = 0.75 (typ.) High forward transfer admittance : |Yfs| = 7.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 500 V) Enhancement mode : Vth = 2.0 to 4.0 V (V

 8.3. Size:425K  toshiba
2sk2777.pdf

2SK2773
2SK2773

2SK2777 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (--MOSV) 2SK2777 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.9 (typ.) High forward transfer admittance : |Y | = 5.5 S (typ.) fs Low leakage current : I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V

 8.4. Size:40K  sanyo
2sk2775.pdf

2SK2773
2SK2773

Ordering number:ENN6392N-Channel Silicon MOSFET2SK2775Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2128 4V drive.[2SK2775] Enables simplified fabrication, high-density mount-8.2ing, and miniaturization in end products due to the7.86.20.6surface mountable package.31 20.3

 8.5. Size:36K  nec
2sk277 2sk278.pdf

2SK2773
2SK2773

 8.6. Size:23K  panasonic
2sk2772.pdf

2SK2773

Power F-MOS FETs 2SK27722SK2772(Tentative)Silicon N-Channel MOSUnit : mmFor high-speed switching6.5 0.15.3 0.14.35 0.1 Features3.0 0.1 High-speed switching High drain-source voltage (VDSS)1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Ta = 25C)1 : Gate1 2 32 : DrainParameter Symbol Rating UnitMarking3

 8.7. Size:199K  fuji
2sk2771-01r.pdf

2SK2773
2SK2773

 8.8. Size:129K  fuji
2sk2770-01.pdf

2SK2773
2SK2773

FUJI POWER MOSFET2SK2770-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC convertersEIAJ SC-65Maximum ratings and characteristicAbsolute maximum ratingsEqui

 8.9. Size:203K  inchange semiconductor
2sk2777.pdf

2SK2773
2SK2773

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2777FEATURESWith TO-263(D2PAK) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PA

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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