SK840303 Todos los transistores

 

SK840303 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SK840303
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 33 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: HSSO8-F1-B

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SK840303 Datasheet (PDF)

 ..1. Size:553K  panasonic
sk840303.pdf

SK840303
SK840303

This product complies with the RoHS Directive (EU 2002/95/EC).SK840303Silicon N-channel MOS FETFor DC-DC converter circuits Package Overview CodeSK840303 is the N-channel MOS FET that is highly suitable for DC-DC HSSO8-F1-Bconverter and other switching circuits.Package dimension clicks here. Click! Features Low drain-source ON resistance:RDS(on) typ

 8.1. Size:346K  panasonic
sk840317.pdf

SK840303
SK840303

Doc No. TT4-EA-14209Revision. 5Product StandardsMOS FETSK8403170LSK8403170LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 3.9 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0

 8.2. Size:369K  panasonic
sk840320.pdf

SK840303
SK840303

Doc No. TT4-EA-14682Revision. 1Product StandardMOS FETSK8403200LSK8403200LSilicon N-channel MOSFETUnit: mm For Li-ion battery / for DC-DC converter3.253.05 0.228 7 6 5 Features Low drain-source ON resistance:RDS(on)typ. = 3.7 m (VGS = 10 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)1 2 3 4 Marking Symbol:1A 0.3

 8.3. Size:347K  panasonic
sk840318.pdf

SK840303
SK840303

Doc No. TT4-EA-14486Revision. 2Product StandardsMOS FETSK8403180LSK8403180LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 6.7 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0

 8.4. Size:2168K  panasonic
sk840319.pdf

SK840303
SK840303

Doc No. TT4-EA-14210Revision. 6Product StandardsMOS FETSK8403190LSK8403190LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 10 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0 Ma

 8.5. Size:345K  panasonic
sk840316.pdf

SK840303
SK840303

Doc No. TT4-EA-14485Revision. 2Product StandardsMOS FETSK8403160LSK8403160LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 3.2 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0

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