SK840320 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SK840320
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 230 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: HSSO8-F1-B
Búsqueda de reemplazo de MOSFET SK840320
SK840320 Datasheet (PDF)
sk840320.pdf
Doc No. TT4-EA-14682Revision. 1Product StandardMOS FETSK8403200LSK8403200LSilicon N-channel MOSFETUnit: mm For Li-ion battery / for DC-DC converter3.253.05 0.228 7 6 5 Features Low drain-source ON resistance:RDS(on)typ. = 3.7 m (VGS = 10 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)1 2 3 4 Marking Symbol:1A 0.3
sk840303.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).SK840303Silicon N-channel MOS FETFor DC-DC converter circuits Package Overview CodeSK840303 is the N-channel MOS FET that is highly suitable for DC-DC HSSO8-F1-Bconverter and other switching circuits.Package dimension clicks here. Click! Features Low drain-source ON resistance:RDS(on) typ
sk840317.pdf
Doc No. TT4-EA-14209Revision. 5Product StandardsMOS FETSK8403170LSK8403170LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 3.9 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0
sk840318.pdf
Doc No. TT4-EA-14486Revision. 2Product StandardsMOS FETSK8403180LSK8403180LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 6.7 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0
sk840319.pdf
Doc No. TT4-EA-14210Revision. 6Product StandardsMOS FETSK8403190LSK8403190LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 10 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0 Ma
sk840316.pdf
Doc No. TT4-EA-14485Revision. 2Product StandardsMOS FETSK8403160LSK8403160LSilicon N-channel MOS FETUnit : mm 3.25For Load-switching / For DC-DC Converter3.05 0.228 7 6 5 Features Low Drain-source On-state Resistance : RDS(on) typ = 3.2 m (VGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 40.3 1.0
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918