SKI03021 Todos los transistores

 ..1. Size:235K  sanken-ele
 ski03021.pdf

30 V, 85 A, 2.1 m Low RDS(ON) N ch Trench Power MOSFET SKI03021 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ----------- 2.6 m max. (VGS = 10 V, ID = 110A) Qg ------ 42.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 110 A) Low Total Gate

 ..2. Size:258K  inchange semiconductor
 ski03021.pdf

Isc N-Channel MOSFET Transistor SKI03021 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

 8.1. Size:235K  sanken-ele
 ski03087.pdf

30 V, 40 A, 7.6 m Low RDS(ON) N ch Trench Power MOSFET SKI03087 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 40 A (4) D RDS(ON) ---------- 9.4 m max. (VGS = 10 V, ID = 31.5 A) Qg ------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) Low Total Gat

 8.2. Size:235K  sanken-ele
 ski03036.pdf

30 V, 80 A, 3.2 m Low RDS(ON) N ch Trench Power MOSFET SKI03036 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 57.0 A) Qg ------16.5 nC (VGS = 4.5 V, VDS = 15 V, ID = 57.0 A) Low Total Gate

 8.3. Size:235K  sanken-ele
 ski03063.pdf

30 V, 40 A, 5.5 m Low RDS(ON) N ch Trench Power MOSFET SKI03063 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 40 A (4) D RDS(ON) ---------- 6.8 m max. (VGS = 10 V, ID = 39.5 A) Qg ------- 9.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 39.5 A) Low Total Gat

 8.4. Size:255K  inchange semiconductor
 ski03036.pdf

isc N-Channel MOSFET Transistor SKI03036 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 3.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.5. Size:255K  inchange semiconductor
 ski03063.pdf

isc N-Channel MOSFET Transistor SKI03063 FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage- V = 30V(Min) DSS Static Drain-Source On-Resistance R = 6.8m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo