SKI03063 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SKI03063
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 64 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 20.6 nC
   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 380 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0068 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET SKI03063

SKI03063 Datasheet (PDF)

..1. Size:235K sanken-ele
ski03063.pdf

30 V, 40 A, 5.5 m Low RDS(ON) N ch Trench Power MOSFET SKI03063 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 40 A (4) D RDS(ON) ---------- 6.8 m max. (VGS = 10 V, ID = 39.5 A) Qg ------- 9.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 39.5 A) Low Total Gat

..2. Size:255K inchange semiconductor
ski03063.pdf

isc N-Channel MOSFET Transistor SKI03063FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 6.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.1. Size:235K sanken-ele
ski03087.pdf

30 V, 40 A, 7.6 m Low RDS(ON) N ch Trench Power MOSFET SKI03087 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 40 A (4) D RDS(ON) ---------- 9.4 m max. (VGS = 10 V, ID = 31.5 A) Qg ------- 7.1 nC (VGS = 4.5 V, VDS = 15 V, ID = 31.5 A) Low Total Gat

8.2. Size:235K sanken-ele
ski03021.pdf

30 V, 85 A, 2.1 m Low RDS(ON) N ch Trench Power MOSFET SKI03021 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 85 A (4) D RDS(ON) ----------- 2.6 m max. (VGS = 10 V, ID = 110A) Qg ------ 42.3 nC (VGS = 4.5 V, VDS = 15 V, ID = 110 A) Low Total Gate

8.3. Size:235K sanken-ele
ski03036.pdf

30 V, 80 A, 3.2 m Low RDS(ON) N ch Trench Power MOSFET SKI03036 Features Package TO-263 V(BR)DSS --------------------------------- 30 V (ID = 100 A) ID ---------------------------------------------------------- 80 A (4) D RDS(ON) ---------- 3.9 m max. (VGS = 10 V, ID = 57.0 A) Qg ------16.5 nC (VGS = 4.5 V, VDS = 15 V, ID = 57.0 A) Low Total Gate

8.4. Size:258K inchange semiconductor
ski03021.pdf

Isc N-Channel MOSFET Transistor SKI03021FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

8.5. Size:255K inchange semiconductor
ski03036.pdf

isc N-Channel MOSFET Transistor SKI03036FEATURESDrain Current I = 80A@ T =25D CDrain Source Voltage-: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 3.9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WSD3067DN56

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