MMF80R650P Todos los transistores

 ..1. Size:1053K  magnachip
 mmf80r650p.pdf

MMF80R650P Datasheet MMF80R650P 800V 0.65 N-channel MOSFET Description MMF80R650P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 0.1. Size:200K  inchange semiconductor
 mmf80r650pth.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF80R650PTH FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 8.1. Size:1446K  magnachip
 mmf80r900pcth.pdf

MMF80R900PC Datasheet MMF80R900PC 800V 0.9 N-channel MOSFET Description MMF80R900PC is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.2. Size:1626K  magnachip
 mmf80r450pbth.pdf

MMF80R450PB Datasheet MMF80R450PB 800V 0.45 N-channel MOSFET Description MMF80R450PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well a

 8.3. Size:1063K  magnachip
 mmf80r1k2pth.pdf

MMF80R1K2P Datasheet MMF80R1K2P 800V 1.2 N-channel MOSFET Description MMF80R1K2P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.4. Size:1404K  magnachip
 mmf80r450p.pdf

MMF80R450P Datasheet MMF80R450P 800V 0.45 N-channel MOSFET Description MMF80R450P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.5. Size:1348K  magnachip
 mmf80r900qzth.pdf

MMF80R900QZ Datasheet MMF80R900QZ 800V 0.90 N-channel MOSFET Description MMF80R900QZ is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 8.6. Size:1136K  magnachip
 mmf80r900pth.pdf

MMF80R900P Datasheet MMF80R900P 800V 0.9 N-channel MOSFET Description MMF80R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo

 8.7. Size:1200K  magnachip
 mmf80r450qzth.pdf

MMF80R450QZ Datasheet MMF80R450QZ 800V 0.45 N-channel MOSFET Description MMF80R450QZ is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well

 8.8. Size:1619K  magnachip
 mmf80r900pbth.pdf

MMF80R900PB Datasheet MMF80R900PB 800V 0.9 N-channel MOSFET Description MMF80R900PB is power MOSFET using Magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as

 8.9. Size:279K  inchange semiconductor
 mmf80r900pcth.pdf

isc N-Channel MOSFET Transistor MMF80R900PCTH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.10. Size:279K  inchange semiconductor
 mmf80r450pth.pdf

isc N-Channel MOSFET Transistor MMF80R450PTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.11. Size:275K  inchange semiconductor
 mmf80r1k2p.pdf

isc N-Channel MOSFET Transistor MMF80R1K2P FEATURES Drain-source on-resistance RDS(on) 1.2 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High fast switching Power Supply ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800

 8.12. Size:279K  inchange semiconductor
 mmf80r450pbth.pdf

isc N-Channel MOSFET Transistor MMF80R450PBTH FEATURES Drain Current I = 11A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.45 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and s

 8.13. Size:279K  inchange semiconductor
 mmf80r1k2pth.pdf

isc N-Channel MOSFET Transistor MMF80R1K2PTH FEATURES Drain Current I = 4.5A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so

 8.14. Size:200K  inchange semiconductor
 mmf80r450p.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MMF80R450P FEATURES Low power loss High speed switching Low on-resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor control DC DC converters ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

 8.15. Size:279K  inchange semiconductor
 mmf80r900pth.pdf

isc N-Channel MOSFET Transistor MMF80R900PTH FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 800V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole