NTMFS4955N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTMFS4955NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 48 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

NTMFS4943NPower MOSFET30 V, 41 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications7.2 mW @ 10 V CPU Power Deli

NTMFS4927N,NTMFS4927NCPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAXCom

NTMFS4927NPower MOSFET30 V, 38 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9.0 m

NTMFS4926NPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant7.0 m

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications 6.2 mW @ 10 V30 V 47 A CPU

NTMFS4939NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V30 V 53 A CP

NTMFS4925NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 48 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives5.6 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant5.6 m

NTMFS4927N,NTMFS4927NCMOSFET Power, Single,N-Channel, SO-8 FL30 V, 38 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.3 mW @ 10 V30 V 38 A These Devices are Pb-Free, Haloge

NTMFS4936N,NTMFS4936NCPower MOSFET30 V, 79 A, Single N-Channel, SO-8 FLFeatures Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching Losseshttp://onsemi.com Next Generation Enhanced Body Diode, Engineered for SoftRecovery, Provides Schottky-Like PerformanceV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen

NTMFS4933NPower MOSFET30 V, 210 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information1.2

NTMFS4926NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 44 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Optimized for 5 V, 12 V Gate Drives7.0 mW @ 10 V These Devices are Pb-Free, Halogen Free/BFR Free and are R

NTMFS4934NPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2.0 mW @ 10 VApplications30 V147 A3.0

NTMFS4925NEPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

NTMFS4982NFPower MOSFET30 V, 207 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAXApplications1.3 mW @ 10 V Serv

NTMFS4939NMOSFET Power, Single,N-Channel, SO-8 FL30 V, 53 AFeatureshttp://onsemi.com Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS5.5 mW @ 10 VCompliant 30 V 53 A8.0 mW @ 4.5 V

NTMFS4933NPower MOSFET30 V, 210 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control Refer to Application Note AND8195/D for Mounting Information1.2

NTMFS4923NEPower MOSFET30 V, 91 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.3 mW @ 10 V 91 A

NTMFS4926NEPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Dual Sided Cooling Capability Optimized for 5 V, 12 V Gate DrivesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR

NTMFS4922NEPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant2.0 mW @

NTMFS4937NPower MOSFET30 V, 70 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V CPU Power Del

NTMFS4939NPower MOSFET30 V, 53 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications5.5 mW @ 10 V30 V 53 A CP

NTMFS4936NPower MOSFET30 V, 79 A, Single N-Channel, SO-8 FLFeatures Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching Losseshttp://onsemi.com Next Generation Enhanced Body Diode, Engineered for SoftRecovery, Provides Schottky-Like Performance These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON

NTMFS4936N,NTMFS4936NCMOSFET Power, Single,N-Channel, SO-8 FL30 V, 79 AFeatureshttp://onsemi.com Low RDS(on), Low Capacitance and Optimized Gate Charge toMinimize Conduction, Driver and Switching LossesV(BR)DSS RDS(ON) MAX ID MAX Next Generation Enhanced Body Diode, Engineered for Soft3.8 mW @ 10 VRecovery, Provides Schottky-Like Performance30 V 79 A The

NTMFS4935NPower MOSFET30 V, 93 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.2 mW @ 10 V CPU Power Deli

NTMFS4983NFPower MOSFET30 V, 106 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX2.1 mW @ 10 VApplications30 V10

NTMFS4921NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delivery3

NTMFS4934NPower MOSFET30 V, 147 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant2.0 mW @ 10 VApplications30 V147 A3.0

NTMFS4985NFPower MOSFET30 V, 65 A, Single N-Channel, SO-8 FLFeatures Integrated Schottky Diode Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(ON) MAX ID MAX3.4 mW @ 10 VApplications30 V65

NTMFS4931NPower MOSFET30 V, 246 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Improve Conduction and Overall Efficiency These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantApplicationsV(BR)DSS RDS(ON) MAX ID MAX OR-ing FET, Power Load Switch, Motor Control1.1 mW @ 10 V Refer to Application Note AND8195/D for Mounting I

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications6.2 mW @ 10 V30 V 47 A CP

NTMFS4921NPower MOSFET30 V, 58.5 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO-8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.95 mW @ 10 V CPU Power Delivery3

NTMFS4946NPower MOSFET30 V, 100 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delivery30 V

NTMFS4935NPower MOSFET30 V, 93 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications3.2 mW @ 10 V CPU Power Del

NTMFS4943NPower MOSFET30 V, 41 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications7.2 mW @ 10 V CPU Power Deli

NTMFS4926NPower MOSFET30 V, 44 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant7.0 m

NTMFS4937NPower MOSFET30 V, 70 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications4.5 mW @ 10 V CPU Power Del

NTMFS4925NPower MOSFET30 V, 48 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant6.0 m

NTMFS4923NEPower MOSFET30 V, 91 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual Sided Cooling CapabilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.3 mW @ 10 V 91 A