2SK3642-ZK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3642-ZK
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 36 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 64 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 5.1 nS
Cossⓘ - Capacitancia de salida: 410 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de 2SK3642-ZK MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3642-ZK datasheet
7.1. Size:162K nec
2sk3642.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3642 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3642 is N-channel MOS FET device that features a low PART NUMBER PACKAGE on-state resistance and excellent switching characteristics, and 2SK3642-ZK TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronou
8.2. Size:99K fuji
2sk3648-01.pdf
2SK3648-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.3. Size:102K fuji
2sk3649-01mr.pdf
2SK3649-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
8.4. Size:241K fuji
2sk3646-01l-s-sj.pdf
2SK3646-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.5. Size:91K fuji
2sk3647-01.pdf
2SK3647-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings (mm) Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristic Absolute maximum ratings Foot Print Pattern (
8.6. Size:87K fuji
2sk3644-01.pdf
2SK3644-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
8.7. Size:91K fuji
2sk3645-01mr.pdf
2SK3645-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
8.8. Size:133K tysemi
2sk3643.pdf
SMD Type IC SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC Product specification 2SK3643 TO-252 Unit mm +0.1 6.50+0.15 2.30-0.1 -0.15 Features +0.8 5.30+0.2 0.50-0.7 -0.2 Low on-state resistance RDS(on)1 =6 m MAX. (VGS =10 V, ID =32A) RDS(on)2 =9 m MAX. (VGS =4.5 V, ID =32 A) 0.12
8.9. Size:46K kexin
2sk3641.pdf
SMD Type IC SMD Type MOSFET MOS Field Effect Transistor 2SK3641 TO-252 Unit mm +0.1 6.50+0.15 2.30-0.1 -0.15 Features +0.8 5.30+0.2 0.50-0.7 -0.2 Low on-state resistance RDS(on)1 =14 m MAX. (VGS =10 V, ID =18A) 0.127 RDS(on)2 =25 m MAX. (VGS =4.5 V, ID =15 A) 0.80+0.1 max -0.1 Low Ciss Ciss = 930 pF TYP. 2.3 0.60+0.1 1Gate -0.1 +0.15 4.60-0.15 2Drain 3Source Absolute
8.10. Size:52K kexin
2sk3640.pdf
SMD Type IC SMD Type Transistors MOS Field Effect Transistor 2SK3640 TO-252 Unit mm 6.50+0.15 2.30+0.1 -0.15 -0.1 Features +0.2 5.30-0.2 0.50+0.8 -0.7 Low on-state resistance RDS(on)1 =21m MAX. (VGS =10 V, ID =9A) RDS(on)2 =40m MAX. (VGS =4.5 V, ID =9 A) 0.127 0.80+0.1 max -0.1 Low Ciss Ciss = 570 pF TYP. Built-in gate protection diode 1. Gate 2.3 0.60+0.1 -0.1 4.60+0.1
8.11. Size:283K inchange semiconductor
2sk3646l.pdf
isc N-Channel MOSFET Transistor 2SK3646L FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.12. Size:357K inchange semiconductor
2sk3646s.pdf
isc N-Channel MOSFET Transistor 2SK3646S FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.13. Size:262K inchange semiconductor
2sk3648-01.pdf
isc N-Channel MOSFET Transistor 2SK3648-01 FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.14. Size:279K inchange semiconductor
2sk3649-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3649-01MR FEATURES Drain Current I = 33A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 70m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.15. Size:289K inchange semiconductor
2sk3644-01.pdf
isc N-Channel MOSFET Transistor 2SK3644-01 FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.16. Size:279K inchange semiconductor
2sk3645-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3645-01MR FEATURES Drain Current I = 41A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 44m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
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History: SM1402NSS
