NDP06N60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDP06N60Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 156 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 7.1 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 31 nC
Tiempo de subida (tr): 17 nS
Conductancia de drenaje-sustrato (Cd): 106 pF
Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET NDP06N60Z
NDP06N60Z Datasheet (PDF)
ndf06n60z ndp06n60z.pdf
NDF06N60Z, NDP06N60ZN-Channel Power MOSFET0.98 W, 600 VoltsFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (TYP) @ 3 AApplications600 V0.98 Adapter (Notebook, Printer, Gaming) LCD Panel PowerN-Channel Lighting BallastsD (2)ABSOLUTE MAXIMUM RA
ndf06n60z ndp06n60z.pdf
NDF06N60Z, NDP06N60ZN-Channel Power MOSFET600 V, 1.2 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 3 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant600 V1.2 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP Unit
ndf06n62z ndp06n62z.pdf
NDF06N62Z, NDP06N62ZN-Channel Power MOSFET620 V, 0.98 W,Features Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and RoHS CompliantVDSS RDS(ON) (TYP) @ 3 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)620 VRating Symbol NDF06N62Z NDP06N62Z Unit 0.98 Drain-to-Source Voltage VDSS 620 VContin
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