NDP06N60Z Todos los transistores

 

NDP06N60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NDP06N60Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 156 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 106 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: TO220AB

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NDP06N60Z Datasheet (PDF)

 ..1. Size:133K  1
ndf06n60z ndp06n60z.pdf

NDP06N60Z
NDP06N60Z

NDF06N60Z, NDP06N60ZN-Channel Power MOSFET0.98 W, 600 VoltsFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantVDSS RDS(ON) (TYP) @ 3 AApplications600 V0.98 Adapter (Notebook, Printer, Gaming) LCD Panel PowerN-Channel Lighting BallastsD (2)ABSOLUTE MAXIMUM RA

 ..2. Size:112K  onsemi
ndf06n60z ndp06n60z.pdf

NDP06N60Z
NDP06N60Z

NDF06N60Z, NDP06N60ZN-Channel Power MOSFET600 V, 1.2 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com ESD Diode-Protected Gate 100% Avalanche TestedVDSS RDS(ON) (MAX) @ 3 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant600 V1.2 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP Unit

 7.1. Size:142K  onsemi
ndf06n62z ndp06n62z.pdf

NDP06N60Z
NDP06N60Z

NDF06N62Z, NDP06N62ZN-Channel Power MOSFET620 V, 0.98 W,Features Low ON Resistance Low Gate Chargehttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and RoHS CompliantVDSS RDS(ON) (TYP) @ 3 AABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)620 VRating Symbol NDF06N62Z NDP06N62Z Unit 0.98 Drain-to-Source Voltage VDSS 620 VContin

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