SW1N60C Todos los transistores

 ..1. Size:471K  samwin
 sw1n60c.pdf

SAMWIN SW1N60C N-channel D-PAK/I-PAK/TO-92 MOSFET Features TO-251 TO-252 TO-92 BVDSS 600V High ruggedness ID 1.0A RDS(ON) (Max 9 )@VGS=10V Gate Charge (Typical 5.6nC) RDS(ON) 9.0ohm 1 2 1 Improved dv/dt Capability 2 3 1 3 2 100% Avalanche Tested 3 2 1. Gate 2. Drain 3. Source General Description 1 This power MOSFET is produced with advanced V

 8.1. Size:220K  1
 ssi1n60a ssw1n60a.pdf

 8.2. Size:503K  samsung
 ssw1n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 12 Rugged Gate Oxide Technology Lower Input Capacitance ID = 1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V 2 Low RDS(ON) 9.390 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characte

 8.3. Size:481K  samwin
 sw1n60a.pdf

SAMWIN SW1N60A N-channel MOSFET BVDSS 600V Features TO-92 ID 0.8A High ruggedness RDS(ON) 15ohm RDS(ON) (Max 15 )@VGS=10V Gate Charge (Typical 6nC) Improved dv/dt Capability 1 2 100% Avalanche Tested 2 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enab

 8.4. Size:450K  samwin
 sw1n60e.pdf

SAMWIN SW1N60E Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 600 V BVDSS Breakdown voltage temperature ID=250uA, referenced to 25oC 0.76 V/oC / TJ coefficient VDS=600V, VGS=0V 1 uA IDSS Drain to source leakage current

 8.5. Size:635K  samwin
 sw1n60d.pdf

SAMWIN SW1N60D N-channel I-PAK/TO-92 MOSFET TO-92 TO-251 Features BVDSS 600V ID 1A High ruggedness RDS(ON) (Max8.5 )@VGS=10V RDS(ON) 8.5 Gate Charge (Typical 6.8 nC) Improved dv/dt Capability 1 100% Avalanche Tested 1 2 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS