SW2N60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SW2N60D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 88.7 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 9 nC
Tiempo de subida (tr): 22 nS
Conductancia de drenaje-sustrato (Cd): 43 pF
Resistencia entre drenaje y fuente RDS(on): 4.5 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de MOSFET SW2N60D
SW2N60D Datasheet (PDF)
sw2n60d.pdf
SAMWIN SW2N60D N-channel I-PAK/D-PAK/TO220F MOSFET BVDSS : 600V Features TO-252 TO-251 TO-220F ID : 2A High ruggedness RDS(ON) : 4.5 RDS(ON) (Max 4.5)@VGS=10V Gate Charge (Typ 9nC) Improved dv/dt Capability 1 1 2 1 100% Avalanche Tested 2 3 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with ad
ssi2n60b ssi2n60b ssw2n60b.pdf
November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
ssw2n60b ssi2n60b.pdf
November 2001SSW2N60B / SSI2N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 2.0A, 600V, RDS(on) = 5.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12.5 nC)planar, DMOS technology. Low Crss ( typical 7.6 pF)This advanced technology has been especially tailored
ssw2n60a.pdf
Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 5.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 3.892 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara
sw2n60b.pdf
SAMWIN SW2N60B N-channel MOSFET TO-220F IPAK DPAK TO-126 BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 4.5ohm RDS(ON) (Max 4.5 )@VGS=10V Gate Charge (Typical 7.5nC) 2 Improved dv/dt Capability 1 2 1 2 1 100% Avalanche Tested 3 1 3 2 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is
sw2n60a1.pdf
SAMWIN SW2N60A1 SW2N60A1N-channel IPAK/TO-220F MOSFET TO-251 TO-220F BVDSS : 600V Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 10nC) Improved dv/dt Capability 1 1 2 100% Avalanche Tested 2 2 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This power MOSFET is produced w
sw2n60.pdf
SW2N60SW2N60 SAMWIN N-channel MOSFET BVDSS : 600V TO-220F TO-220 TO-251 Features ID : 2.0A High ruggedness RDS(ON) : 5.0ohm RDS(ON) (Max 5.0 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 1 2 3 2 3 3 1 1. Gate 2. Drain 3. Source General Description 3 This power MOSFET is produced wit
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
