SW4N60A Todos los transistores

 ..1. Size:393K  samwin
 sw4n60a.pdf

SAMWIN SW4N60A N-channel TO-220F MOSFET BVDSS 600V Features TO-220F ID 4.0A High ruggedness RDS(ON) 2.2ohm RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 22nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN

 0.1. Size:217K  1
 ssi4n60a ssw4n60a.pdf

 0.2. Size:503K  samsung
 ssw4n60a.pdf

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) 2.037 (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 8.1. Size:644K  fairchild semi
 ssi4n60b ssi4n60b ssw4n60b.pdf

November 2001 SSW4N60B / SSI4N60B 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 14 pF) This advanced technology has been especially tailored to

 8.2. Size:628K  samwin
 sw4n60dc swi4n60dc swd4n60dc.pdf

SW4N60DC N-channel Enhancement mode TO-251/TO-252 MOSFET Features TO-251 TO-252 BVDSS 600V ID 4A High ruggedness RDS(ON) (Typ 2.0 )@VGS=10V RDS(ON) 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 1 2 1 2 100% Avalanche Tested 2 3 3 Application LED,Charge 1 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET is produce

 8.3. Size:654K  samwin
 sw4n60d.pdf

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET BVDSS 600V Features TO-220F TO-251N TO-252 ID 4A High ruggedness RDS(ON) 2.2 RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 2 1 1 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produc

 8.4. Size:791K  samwin
 sw4n60v.pdf

SW4N60V SW4N60V SAMWIN N-channel MOSFET IPAK DPAK BVDSS 600V Features ID 4.0A High ruggedness RDS(ON) 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 27nC) 2 Improved dv/dt Capability 1 1 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced super-junction technology

 8.5. Size:917K  samwin
 sw4n60b.pdf

SAMWIN SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET TO-220F TO-251 TO-252 BVDSS 600V Features ID 4A High ruggedness RDS(ON) 2.5 RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typ 11nC) 1 Improved dv/dt Capability 1 2 2 1 3 2 100% Avalanche Tested 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produce

 8.6. Size:371K  samwin
 sw4n60.pdf

SW4N60 SAMWIN N-channel MOSFET BVDSS 600V Features TO-220F TO-220 ID 4.0A High ruggedness RDS(ON) 2.2ohm RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 30nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This

 8.7. Size:650K  samwin
 sw4n60k.pdf

SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS 600V Features TO-220F TO-251 TO-252 ID 4A High ruggedness RDS(ON) 1.15 RDS(ON) (Max 1.15 )@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced