SW4N60B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SW4N60B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 11 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO-252

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SW4N60B Datasheet (PDF)

..1. Size:917K samwin
sw4n60b.pdf

SAMWIN SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET TO-220F TO-251 TO-252 BVDSS : 600V Features ID : 4A High ruggedness RDS(ON) : 2.5 RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typ 11nC) 1 Improved dv/dt Capability 1 2 2 1 3 2 100% Avalanche Tested 3 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produce

0.1. Size:644K fairchild semi
ssi4n60b ssi4n60b ssw4n60b.pdf

November 2001SSW4N60B / SSI4N60B600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 4.0A, 600V, RDS(on) = 2.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC)planar, DMOS technology. Low Crss ( typical 14 pF)This advanced technology has been especially tailored to

8.1. Size:217K 1
ssi4n60a ssw4n60a.pdf

8.2. Size:503K samsung
ssw4n60a.pdf

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 2.5 Rugged Gate Oxide Technology Lower Input CapacitanceID = 4 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V2 Lower RDS(ON) : 2.037 (Typ.)112331. Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Chara

8.3. Size:628K samwin
sw4n60dc swi4n60dc swd4n60dc.pdf

SW4N60DCN-channel Enhancement mode TO-251/TO-252 MOSFETFeaturesTO-251 TO-252 BVDSS : 600VID : 4A High ruggedness RDS(ON) (Typ 2.0)@VGS=10VRDS(ON) : 2.0 Gate Charge (Typ 17nC) Improved dv/dt Capability 121 2 100% Avalanche Tested2 33 Application: LED,Charge11. Gate 2. Drain 3. Source3General DescriptionThis power MOSFET is produce

8.4. Size:654K samwin
sw4n60d.pdf

SAMWIN SW4N60D N-channel TO-220F/I-PAKN/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251N TO-252 ID : 4A High ruggedness RDS(ON) : 2.2 RDS(ON) (Max 2.2)@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 2 1 1 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produc

8.5. Size:393K samwin
sw4n60a.pdf

SAMWIN SW4N60A N-channel TO-220F MOSFET BVDSS : 600V Features TO-220F ID : 4.0A High ruggedness RDS(ON) : 2.2ohm RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 22nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN

8.6. Size:791K samwin
sw4n60v.pdf

SW4N60VSW4N60VSAMWINN-channel MOSFETIPAK DPAKBVDSS : 600VFeaturesID : 4.0A High ruggednessRDS(ON) : 2.5ohm RDS(ON) (Max 2.5 )@VGS=10V Gate Charge (Typical 27nC)2 Improved dv/dt Capability 1122 100% Avalanche Tested331. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced super-junction technology

8.7. Size:371K samwin
sw4n60.pdf

SW4N60SAMWINN-channel MOSFETBVDSS : 600VFeaturesTO-220F TO-220ID : 4.0A High ruggednessRDS(ON) : 2.2ohm RDS(ON) (Max 2.2 )@VGS=10V Gate Charge (Typ 30nC) Improved dv/dt Capability 1 122 2 100% Avalanche Tested3 31. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.3This

8.8. Size:650K samwin
sw4n60k.pdf

SAMWIN SW4N60K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 600V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.15 RDS(ON) (Max 1.15)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 2 100% Avalanche Tested 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

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