SW4N65D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SW4N65D Datasheet (PDF)

..1. Size:671K samwin
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SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS : 650V Features TO-220F TO-251N TO-252 TO-251S ID : 4A High ruggedness RDS(ON) : 2.6 RDS(ON) (Max 2.6)@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi

8.1. Size:650K samwin
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SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS : 650V Features TO-220F TO-251 TO-252 ID : 4A High ruggedness RDS(ON) : 1.25 RDS(ON) (Max 1.25)@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

8.2. Size:807K samwin
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SW4N65BSW4N65BSAMWINN-channel MOSFETTO-220FFeatures BVDSS : 650VID : 4.0A High ruggedness RDS(ON) (Max 2.7 )@VGS=10V RDS(ON) : 2.7ohm Gate Charge (Typical 11nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested31. Gate 2. Drain 3. Source1General DescriptionThis power MOSFET is produced with advanced VDMOS technology of SAMWIN.3This tec

8.3. Size:568K samwin
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SAMWIN SW4N65U N-channel TO-220F /IPAK MOSFET TO-220F TO-251N Features BVDSS : 650V ID : 4.0A High ruggedness RDS(ON) (Max 2.6 )@VGS=10V RDS(ON) : 2.6ohm Gate Charge (Typical 17nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMO

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .