SW4N65D Todos los transistores

 ..1. Size:671K  samwin
 sw4n65d.pdf

SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS 650V Features TO-220F TO-251N TO-252 TO-251S ID 4A High ruggedness RDS(ON) 2.6 RDS(ON) (Max 2.6 )@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi

 8.1. Size:650K  samwin
 sw4n65k.pdf

SAMWIN SW4N65K N-channel TO-220F/I-PAK/D-PAK MOSFET BVDSS 650V Features TO-220F TO-251 TO-252 ID 4A High ruggedness RDS(ON) 1.25 RDS(ON) (Max 1.25 )@VGS=10V Gate Charge (Typ 13nC) Improved dv/dt Capability 1 1 1 2 2 100% Avalanche Tested 2 2 3 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced

 8.2. Size:807K  samwin
 sw4n65b.pdf

SW4N65B SW4N65B SAMWIN N-channel MOSFET TO-220F Features BVDSS 650V ID 4.0A High ruggedness RDS(ON) (Max 2.7 )@VGS=10V RDS(ON) 2.7ohm Gate Charge (Typical 11nC) Improved dv/dt Capability 1 2 2 100% Avalanche Tested 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. 3 This tec

 8.3. Size:568K  samwin
 sw4n65u.pdf

SAMWIN SW4N65U N-channel TO-220F /IPAK MOSFET TO-220F TO-251N Features BVDSS 650V ID 4.0A High ruggedness RDS(ON) (Max 2.6 )@VGS=10V RDS(ON) 2.6ohm Gate Charge (Typical 17nC) Improved dv/dt Capability 1 1 2 2 2 100% Avalanche Tested 3 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMO