UPA1720 Todos los transistores

 ..1. Size:193K  renesas
 upa1720 upa1720g.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:192K  renesas
 upa1725g.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:187K  renesas
 upa1724 upa1724g.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:64K  nec
 upa1727 upa1727g.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1727 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1727 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 85 1, 2, 3 ; Source 4 ; Gate FEATURES 5, 6, 7, 8 ; Drain Single chip type Low on-state resistance RDS(on)1 = 14 m TYP. (VGS = 10 V

 8.4. Size:64K  nec
 upa1728 upa1728g.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1728 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications. 8 5 1, 2, 3 ; Source 4 ; Gate FEATURES 5, 6, 7, 8 ; Drain Single chip type Low on-state resistance RDS(on)1 = 19 m TYP. (VGS = 10