RFP12N06RLE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP12N06RLE

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 49 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 89 nS

Cossⓘ - Capacitancia de salida: 130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm

Encapsulados: TO220AB

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RFP12N06RLE datasheet

 ..1. Size:215K  fairchild semi
 rfd12n06rle rfd12n06rlesm rfp12n06rle.pdf pdf_icon

RFP12N06RLE

RFD12N06RLE, RFD12N06RLESM, RFP12N06RLE Data Sheet January 2002 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance SOURCE DRAIN - rDS(ON) = 0.063 , VGS = 10V DRAIN DRAIN (FLANGE) GATE - rDS(ON) = 0.071 , VGS = 5V (FLANGE) GATE Simulation Models SOURCE - Temperature Compensate

 7.1. Size:95K  njs
 rfm12n08l rfm12n10l rfp12n08l.pdf pdf_icon

RFP12N06RLE

 7.2. Size:94K  njs
 rfm12n08 rfm12n10 rfp12n08 rfp12n10.pdf pdf_icon

RFP12N06RLE

 8.1. Size:131K  fairchild semi
 rfp12n10l.pdf pdf_icon

RFP12N06RLE

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET 12A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.200 power field effect transistors specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv

MOSTRAR MÁS

Otros transistores... RFG50N06LE, RFG60P03, RFG60P05E, RFG60P06E, RFG70N06, RFG75N05E, RFL1N10L, RFP10P03L, 4435, RFP12N10L, RFP12P08, RFP12P10, RFP14N05, RFP14N05L, RFP14N06, RFP14N06L, RFP15N05L