RFP12N10L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RFP12N10L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 325 max pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO220AB

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RFP12N10L datasheet

 ..1. Size:131K  fairchild semi
 rfp12n10l.pdf pdf_icon

RFP12N10L

RFP12N10L Data Sheet April 2005 12A, 100V, 0.200 Ohm, Logic Level, Features N-Channel Power MOSFET 12A, 100V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.200 power field effect transistors specifically designed for use Design Optimized for 5V Gate Drives with logic level (5V) driving sources in applications such as programmable controllers, automotiv

 ..2. Size:533K  onsemi
 rfp12n10l.pdf pdf_icon

RFP12N10L

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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 rfm12n08 rfm12n10 rfp12n08 rfp12n10.pdf pdf_icon

RFP12N10L

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 rfm12n18 rfm12n20 rfp12n18 rfp12n20.pdf pdf_icon

RFP12N10L

MOSTRAR MÁS

Otros transistores... RFG60P03, RFG60P05E, RFG60P06E, RFG70N06, RFG75N05E, RFL1N10L, RFP10P03L, RFP12N06RLE, SPP20N60C3, RFP12P08, RFP12P10, RFP14N05, RFP14N05L, RFP14N06, RFP14N06L, RFP15N05L, RFP15N06L