UPA1818GR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA1818GR
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 207 nS
Cossⓘ - Capacitancia de salida: 510 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
Encapsulados: TSSOP-8
Búsqueda de reemplazo de UPA1818GR MOSFET
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UPA1818GR datasheet
upa1818gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1815gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1814gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1814 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1814 is a switching device which can be 85 driven directly by a 4 V power source. The PA1814 features a low on-state resistance and 1, 5, 8 Drain excellent switching characteristics, and is suitable for 1.2 MAX. 2, 3,
upa1819gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1819 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1819 is a switching device that can be driven 85 directly by a 4.0 V power source. This device features a low on-state resistance and 1 Drain1 1, 2, 3 Source excellent switching characteristics, and is suitable for 1.2
Otros transistores... UPA1803GR , UPA1804GR , UPA1808GR , UPA1809GR , UPA1814GR , UPA1815GR , UPA1816GR , UPA1817GR , IRFP260N , UPA1819GR , UPA1820GR , UPA1830GR , UPA1855GR , UPA1856GR , UPA1857GR , UPA1858GR , UPA1870BGR .
History: KP501A | KP214A9
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