UPA1900 Todos los transistores

 ..1. Size:189K  renesas
 upa1900.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:69K  nec
 upa1901.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1901 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1901 is a switching device, which can be driven +0.1 0.32 0.05 directly by a 2.5 V power source. 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable f

 8.2. Size:129K  nec
 upa1902.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1902 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1902 is a switching device, which can be driven directly by a 4.5 V power source. +0.1 0.32 0.05 0.16+0.1 0.06 This PA1902 features a low on-state resistance and excellent switching characteristics, and is suitable for

 9.1. Size:115K  renesas
 upa1931te.pdf

Preliminary Data Sheet PA1931 R07DS0009EJ0103 Rev.1.03 May 09, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA1931 is a switching device, which can be driven directly by a 4.5 V power source. The PA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Feat

 9.2. Size:236K  renesas
 upa1919.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:241K  renesas
 upa1932te.pdf

Preliminary Data Sheet PA1932TE R07DS0001EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA1932TE is a switching device, which can be driven directly by a 4.5 V power source. The PA1932TE features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.

 9.4. Size:287K  renesas
 upa1952.pdf

2010 4 1 NEC

 9.5. Size:310K  renesas
 upa1930.pdf

2010 4 1 NEC

 9.6. Size:285K  renesas
 upa1970.pdf

2010 4 1 NEC

 9.7. Size:187K  renesas
 upa1912.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:208K  renesas
 upa1980.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.9. Size:200K  renesas
 upa1917.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:63K  nec
 upa1914.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1914 is a switching device which can be driven +0.1 0.32 0.05 directly by a 4 V power source. 0.16+0.1 0.06 The PA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications

 9.11. Size:70K  nec
 upa1951.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1951 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1951 is a switching device, which can be driven directly by a 1.8 V power source. +0.1 0.32 0.05 0.16+0.1 0.06 The device features a low on-state resistance and excellent switching characteristics, and is suitable f

 9.12. Size:92K  nec
 upa1981.pdf

DATA SHEET INTEGRATED LOAD SWITCH PA1981 N-CHANNEL/P-CHANNEL MOS FET PAIR FOR LOAD SWITCH PACKAGE DRAWING (Unit mm) DESCRIPTION +0.1 +0.1 0.32 0.05 0.16 0.06 The PA1981 is a N-Channel/P-Channel MOS FET pair for compact power management in portable electronic equipment where 2.5 to 8 V input and 2.8 A output current capability are needed. This load switch inte

 9.13. Size:65K  nec
 upa1950.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1950 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1950 is a switching device which can be driven +0.1 0.32 0.05 directly by a 1.8 V power source. 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable fo

 9.14. Size:70K  nec
 upa1913.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1913 is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5-V power source. 0.16+0.1 0.06 The PA1913 features a low on-state resistance and excellent switching characteristics, and is suitable

 9.15. Size:58K  nec
 upa1916.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1916 is a switching device which can be driven +0.1 0.32 0.05 directly by a 1.8 V power source. 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable for

 9.16. Size:378K  nec
 upa1911a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1911A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1911A is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5 V power source. 0.16+0.1 0.06 The PA1911A features a low on-state resistance and excellent switching characteristics, and is suita

 9.17. Size:65K  nec
 upa1915.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1915 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1915 is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5-V power source. 0.16+0.1 0.06 The PA1915 features a low on-state resistance and excellent switching characteristics, and is suitable f

 9.18. Size:68K  nec
 upa1918.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1918 is a switching device, which can be driven +0.1 directly by a 4.0 V power source. 0.32 0.05 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable fo