UPA1916 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA1916
Código: TL
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.45 V
Qgⓘ - Carga de la puerta: 8 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 330 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.039 Ohm
Paquete / Cubierta: SC-95
Búsqueda de reemplazo de MOSFET UPA1916
UPA1916 Datasheet (PDF)
upa1916.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1916P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA1916 is a switching device which can be driven+0.10.32 0.05directly by a 1.8 V power source.0.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable for
upa1919.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1912.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1917.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa1914.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1914P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1914 is a switching device which can be driven+0.10.32 0.05directly by a 4 V power source. 0.16+0.10.06 The PA1914 features a low on-state resistance and excellentswitching characteristics, and is suitable for applications
upa1913.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1913 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1913 features a low on-state resistance and excellentswitching characteristics, and is suitable
upa1911a.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1911AP-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1911A is a switching device which can be driven+0.10.32 0.05directly by a 2.5 V power source.0.16+0.10.06 The PA1911A features a low on-state resistance and excellentswitching characteristics, and is suita
upa1915.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR PA1915P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTION PACKAGE DRAWING (Unit : mm) The PA1915 is a switching device which can be driven+0.10.32 0.05directly by a 2.5-V power source. 0.16+0.10.06 The PA1915 features a low on-state resistance and excellentswitching characteristics, and is suitable f
upa1918.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTORPA1918P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA1918 is a switching device, which can be driven+0.1directly by a 4.0 V power source. 0.32 0.050.16+0.10.06 This device features a low on-state resistance and excellentswitching characteristics, and is suitable fo
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F