UPA1952 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA1952
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.15 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua
de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 120 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm
Encapsulados: SC-95
Búsqueda de reemplazo de UPA1952 MOSFET
- Selecciónⓘ de transistores por parámetros
UPA1952 datasheet
8.1. Size:70K nec
upa1951.pdf 
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1951 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1951 is a switching device, which can be driven directly by a 1.8 V power source. +0.1 0.32 0.05 0.16+0.1 0.06 The device features a low on-state resistance and excellent switching characteristics, and is suitable f
8.2. Size:65K nec
upa1950.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1950 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1950 is a switching device which can be driven +0.1 0.32 0.05 directly by a 1.8 V power source. 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable fo
9.1. Size:115K renesas
upa1931te.pdf
Preliminary Data Sheet PA1931 R07DS0009EJ0103 Rev.1.03 May 09, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA1931 is a switching device, which can be driven directly by a 4.5 V power source. The PA1931 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. Feat
9.2. Size:236K renesas
upa1919.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.3. Size:241K renesas
upa1932te.pdf
Preliminary Data Sheet PA1932TE R07DS0001EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA1932TE is a switching device, which can be driven directly by a 4.5 V power source. The PA1932TE features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
9.4. Size:189K renesas
upa1900.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.7. Size:187K renesas
upa1912.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.8. Size:208K renesas
upa1980.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.9. Size:200K renesas
upa1917.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
9.10. Size:63K nec
upa1914.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1914 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1914 is a switching device which can be driven +0.1 0.32 0.05 directly by a 4 V power source. 0.16+0.1 0.06 The PA1914 features a low on-state resistance and excellent switching characteristics, and is suitable for applications
9.11. Size:92K nec
upa1981.pdf
DATA SHEET INTEGRATED LOAD SWITCH PA1981 N-CHANNEL/P-CHANNEL MOS FET PAIR FOR LOAD SWITCH PACKAGE DRAWING (Unit mm) DESCRIPTION +0.1 +0.1 0.32 0.05 0.16 0.06 The PA1981 is a N-Channel/P-Channel MOS FET pair for compact power management in portable electronic equipment where 2.5 to 8 V input and 2.8 A output current capability are needed. This load switch inte
9.12. Size:69K nec
upa1901.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1901 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1901 is a switching device, which can be driven +0.1 0.32 0.05 directly by a 2.5 V power source. 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable f
9.13. Size:70K nec
upa1913.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1913 is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5-V power source. 0.16+0.1 0.06 The PA1913 features a low on-state resistance and excellent switching characteristics, and is suitable
9.14. Size:58K nec
upa1916.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1916 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1916 is a switching device which can be driven +0.1 0.32 0.05 directly by a 1.8 V power source. 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable for
9.15. Size:378K nec
upa1911a.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1911A P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1911A is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5 V power source. 0.16+0.1 0.06 The PA1911A features a low on-state resistance and excellent switching characteristics, and is suita
9.16. Size:129K nec
upa1902.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1902 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1902 is a switching device, which can be driven directly by a 4.5 V power source. +0.1 0.32 0.05 0.16+0.1 0.06 This PA1902 features a low on-state resistance and excellent switching characteristics, and is suitable for
9.17. Size:65K nec
upa1915.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1915 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1915 is a switching device which can be driven +0.1 0.32 0.05 directly by a 2.5-V power source. 0.16+0.1 0.06 The PA1915 features a low on-state resistance and excellent switching characteristics, and is suitable f
9.18. Size:68K nec
upa1918.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA1918 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit mm) The PA1918 is a switching device, which can be driven +0.1 directly by a 4.0 V power source. 0.32 0.05 0.16+0.1 0.06 This device features a low on-state resistance and excellent switching characteristics, and is suitable fo
Otros transistores... UPA1917
, UPA1918
, UPA1919
, UPA1930
, UPA1931TE
, UPA1932TE
, UPA1950
, UPA1951
, IRF530
, UPA1970
, UPA1980
, UPA1981
, UPA2200T1M
, UPA2201T1M
, UPA2210T1M
, UPA2211T1M
, UPA2350BT1P
.
History: LNG7N60D
| IPA60R199CP
| IXFH26N50P
