RFP15N05L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

RFP15N05LData Sheet January 200415A, 50V, 0.140 Ohm, Logic Level N- FeaturesChannel Power MOSFETs 15A, 50V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.140power field effect transistors designed for applications such Design Optimized for 5V Gate Drivesas switching regulators, switching converters, motor drivers, relay drivers and drivers for hi

RFP15N05L, RFP15N06LData Sheet July 1999 File Number 1558.315A, 50V and 60V, 0.140 Ohm, Logic Level FeaturesN-Channel Power MOSFETs 15A, 50V and 60VThese are N-Channel enhancement mode silicon gate rDS(ON) = 0.140power field effect transistors designed for applications such Design Optimized for 5V Gate Drivesas switching regulators, switching converters, motor driv

RFP15N08LData Sheet June 1999 File Number 2840.115A, 80V, 0.140 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 15A, 80VThe RFP15N08L is an N-Channel enhancement mode rDS(ON) = 0.140silicon gate power field effect transistor specifically designed Design Optimized for 5 Volt Gate Drivefor use with logic level (5 volt) driving sources in applicationssuch as progra

PD - 95517SMPS MOSFETIRFP15N60LPbFApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applications Lead-FreeFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications.

PD - 94415ASMPS MOSFETIRFP15N60LApplications HEXFET Power MOSFET Zero Voltage Switching SMPSTrr typ.VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies600V 385m 130ns 15A Motor Control applicationsFeatures and Benefits SuperFast body diode eliminates the need for externaldiodes in ZVS applications. Lower Gate c

IRFP15N60L, SiHFP15N60LVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Superfast Body Diode Eliminates the Need forVDS (V) 600AvailableExternal Diodes in ZVS ApplicationsRDS(on) ()VGS = 10 V 0.385RoHS* Lower Gate Charge Results in Simple DriveQg (Max.) (nC) 100COMPLIANTRequirementsQgs (nC) 30Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved

isc N-Channel MOSFET Transistor IRFP15N60LDESCRIPTIONDrain Current I =40A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =0.46(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPSMotor contro