UPA2465T1Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2465T1Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(off)|ⓘ - Voltaje de corte de la puerta: 0.5 V
Qgⓘ - Carga de la puerta: 8 nC
trⓘ - Tiempo de subida: 7500 nS
Cossⓘ - Capacitancia de salida: 120 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
Paquete / Cubierta: 8-HUSON
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UPA2465T1Q Datasheet (PDF)
upa2465t1q.pdf
Preliminary Data Sheet R07DS0190EJ0100 PA2465T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2465T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2465T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2462t1q.pdf
Preliminary Data Sheet R07DS0187EJ0100 PA2462T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2462T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2462T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2463t1q.pdf
Preliminary Data Sheet R07DS0188EJ0100 PA2463T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2463T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2463T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2464t1q.pdf
Preliminary Data Sheet R07DS0189EJ0100 PA2464T1Q Rev.1.00Dec 06, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2464T1Q is a switching device, which can be driven directly by a 2.5 V power source. The PA2464T1Q features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F