UPA2521T1H Todos los transistores

 

UPA2521T1H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UPA2521T1H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.8 nS

Cossⓘ - Capacitancia de salida: 170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm

Encapsulados: 8-VSOF

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UPA2521T1H datasheet

 ..1. Size:266K  renesas
upa2521t1h.pdf pdf_icon

UPA2521T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:264K  renesas
upa2520t1h.pdf pdf_icon

UPA2521T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.1. Size:260K  renesas
upa2560 upa2560t1h.pdf pdf_icon

UPA2521T1H

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:217K  renesas
upa2562t1h.pdf pdf_icon

UPA2521T1H

Preliminary Data Sheet PA2562T1H R07DS0007EJ0100 Rev.1.00 Jul 08, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2562 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo

Otros transistores... UPA2451CTL , UPA2452 , UPA2452TL , UPA2462T1Q , UPA2463T1Q , UPA2464T1Q , UPA2465T1Q , UPA2520T1H , IRFZ48N , UPA2550 , UPA2550T1H , UPA2560 , UPA2560T1H , UPA2561T1H , UPA2562T1H , UPA2590T1H , UPA2591T1H .

 

 

 


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