UPA2560 Todos los transistores

 

UPA2560 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UPA2560
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2.8 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: 8-VSOF
 

 Búsqueda de reemplazo de UPA2560 MOSFET

   - Selección ⓘ de transistores por parámetros

 

UPA2560 Datasheet (PDF)

 ..1. Size:260K  renesas
upa2560 upa2560t1h.pdf pdf_icon

UPA2560

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:217K  renesas
upa2562t1h.pdf pdf_icon

UPA2560

Preliminary Data Sheet PA2562T1H R07DS0007EJ0100Rev.1.00Jul 08, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2562 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo

 8.2. Size:223K  renesas
upa2561t1h.pdf pdf_icon

UPA2560

Preliminary Data Sheet PA2561T1H R07DS0006EJ0100Rev.1.00Jul 08, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2561 is Dual N-channel MOSFETs designed for back light inverters and power management applications of portable equipments. Dual N-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 2.5 V drive available Lo

 9.1. Size:290K  renesas
upa2593t1h.pdf pdf_icon

UPA2560

Preliminary Data Sheet R07DS0012EJ0200 PA2593 Rev.2.00Sep 10, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2593 is N- and P-channel MOSFETs designed for DC/DC converters and power management applications of portable equipments. N- and P-channel MOSFETs are assembled in one package, to contribute minimize the equipments. Features 4.5 V drive available

Otros transistores... UPA2462T1Q , UPA2463T1Q , UPA2464T1Q , UPA2465T1Q , UPA2520T1H , UPA2521T1H , UPA2550 , UPA2550T1H , 60N06 , UPA2560T1H , UPA2561T1H , UPA2562T1H , UPA2590T1H , UPA2591T1H , UPA2592T1H , UPA2593T1H , UPA2650T1E .

History: HRD13N10K | NCE8580

 

 
Back to Top

 


 
.