RFP15N08L Todos los transistores

 ..1. Size:40K  intersil
 rfp15n08l.pdf

RFP15N08L Data Sheet June 1999 File Number 2840.1 15A, 80V, 0.140 Ohm, Logic Level, Features N-Channel Power MOSFET 15A, 80V The RFP15N08L is an N-Channel enhancement mode rDS(ON) = 0.140 silicon gate power field effect transistor specifically designed Design Optimized for 5 Volt Gate Drive for use with logic level (5 volt) driving sources in applications such as progra

 7.1. Size:100K  fairchild semi
 rfp15n05l.pdf

RFP15N05L Data Sheet January 2004 15A, 50V, 0.140 Ohm, Logic Level N- Features Channel Power MOSFETs 15A, 50V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.140 power field effect transistors designed for applications such Design Optimized for 5V Gate Drives as switching regulators, switching converters, motor drivers, relay drivers and drivers for hi

 7.2. Size:40K  intersil
 rfp15n05l rfp15n06l.pdf

RFP15N05L, RFP15N06L Data Sheet July 1999 File Number 1558.3 15A, 50V and 60V, 0.140 Ohm, Logic Level Features N-Channel Power MOSFETs 15A, 50V and 60V These are N-Channel enhancement mode silicon gate rDS(ON) = 0.140 power field effect transistors designed for applications such Design Optimized for 5V Gate Drives as switching regulators, switching converters, motor driv

 8.1. Size:208K  international rectifier
 irfp15n60lpbf.pdf

PD - 95517 SMPS MOSFET IRFP15N60LPbF Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Lead-Free Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications.

 8.2. Size:198K  international rectifier
 irfp15n60l.pdf

PD - 94415A SMPS MOSFET IRFP15N60L Applications HEXFET Power MOSFET Zero Voltage Switching SMPS Trr typ. VDSS RDS(on) typ. ID Telecom and Server Power Supplies Uninterruptible Power Supplies 600V 385m 130ns 15A Motor Control applications Features and Benefits SuperFast body diode eliminates the need for external diodes in ZVS applications. Lower Gate c

 8.3. Size:82K  njs
 rfm15n12 rfm15n15 rfp15n12 rfp15n15.pdf

 8.4. Size:147K  vishay
 irfp15n60lpbf.pdf

IRFP15N60L, SiHFP15N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Superfast Body Diode Eliminates the Need for VDS (V) 600 Available External Diodes in ZVS Applications RDS(on) ( )VGS = 10 V 0.385 RoHS* Lower Gate Charge Results in Simple Drive Qg (Max.) (nC) 100 COMPLIANT Requirements Qgs (nC) 30 Qgd (nC) 46 Enhanced dV/dt Capabilities Offer Improved

 8.5. Size:233K  inchange semiconductor
 irfp15n60l.pdf

isc N-Channel MOSFET Transistor IRFP15N60L DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Static Drain-Source On-Resistance R =0.46 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies UPS Motor contro