UPA2680T1E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2680T1E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
Encapsulados: 6LD3X3MLP
Búsqueda de reemplazo de UPA2680T1E MOSFET
- Selecciónⓘ de transistores por parámetros
UPA2680T1E datasheet
upa2680t1e.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2650t1e.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2670t1r.pdf
Data Sheet PA2670T1R R07DS0833EJ0101 DUAL P-CHANNEL MOSFET Rev.1.01 Apr 15, 2013 20 V, 3.0 A, 79 m Description The PA2670T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so o
upa2672t1r.pdf
Data Sheet PA2672T1R R07DS0834EJ0101 DUAL P-CHANNEL MOSFET Rev.1.01 12 V, 4.0 A, 67 m Apr 15, 2013 Description The PA2672T1R is Dual P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
Otros transistores... UPA2562T1H, UPA2590T1H, UPA2591T1H, UPA2592T1H, UPA2593T1H, UPA2650T1E, UPA2670T1R, UPA2672T1R, IRFP064N, UPA2700GR, STQ1NC45, RU7088R3, PTP04N04N, OSG55R190AF, OSG55R190DF, OSG55R190FF, OSG55R190PF
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