UPA2726UT1A Datasheet. Equivalente

 ..1. Size:172K  nec
 upa2726ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 7.0 m MAX. (VGS = 10 V, ID = 10 A) 6 0.2 0.10 S RDS(on)2 = 11.0 m MAX. (VGS = 4.5 V, ID = 10 A

 8.1. Size:268K  renesas
 upa2720agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:272K  renesas
 upa2721gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:263K  renesas
 upa2721agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:257K  renesas
 upa2728gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:177K  nec
 upa2723ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2723UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. 1 8 2 7 FEATURES 3 6 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 2.5 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 m

 8.6. Size:182K  nec
 upa2722ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2722UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 2 7 FEATURES 3 6 Low on-state resistance 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 4.6 m MAX. (VGS = 4.5 V, ID = 15

 8.7. Size:178K  nec
 upa2724t1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 5.0 m MAX. (VGS = 4.5 V, ID = 15 A)

 8.8. Size:178K  nec
 upa2725ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2725UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 5.0 m MAX. (VGS = 10 V, ID = 13 A) 6 0.2 0.10 S RDS(on)2 = 7.5 m MAX. (VGS = 4.5 V, ID = 13 A)

 8.9. Size:176K  nec
 upa2727t1a.pdf