UPA2733GR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2733GR 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.5 nS
Cossⓘ - Capacitancia de salida: 200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Encapsulados: SOP-8
📄📄 Copiar
Búsqueda de reemplazo de UPA2733GR MOSFET
- Selecciónⓘ de transistores por parámetros
UPA2733GR datasheet
upa2733gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5 designed for power management applications of notebook 1, 2, 3 Source 4 Gate computers and so on. 5, 6, 7, 8 Drain FEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M
upa2734gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2739t1a.pdf
Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 30 V, 85 A, 2.8 m Nov 28, 2012 Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG
upa2736gr.pdf
Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 30 V, 14 A, 7.0 m Aug 28, 2012 Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14
Otros transistores... UPA2726UT1A, UPA2727T1A, UPA2728GR, UPA2730TP, UPA2731T1A, UPA2731UT1A, UPA2732T1A, UPA2732UT1A, AON6380, UPA2734GR, UPA2735GR, UPA2736GR, UPA2737GR, UPA2738GR, UPA2739T1A, UPA2742GR, UPA2743T1A
History: 3N143 | IXTR20P50P | UPA2723UT1A | UPA2725UT1A | UPA2730TP | HGP110N10SL
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
d209l | irfb4321 | 2n333 | c3852 | irfp140 | ksc2383 datasheet | 2n3906 equivalent | a733 transistor equivalent
