UPA2738GR Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UPA2738GR  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 710 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: SOP-8

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UPA2738GR datasheet

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UPA2738GR

Data Sheet PA2738GR P-channel MOSFET R07DS0870EJ0100 Rev.1.00 30 V, 10 A, 15 m Aug 28, 2012 Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)

 8.1. Size:265K  renesas
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UPA2738GR

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:139K  renesas
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UPA2738GR

Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 30 V, 85 A, 2.8 m Nov 28, 2012 Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG

 8.3. Size:193K  renesas
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UPA2738GR

Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 30 V, 14 A, 7.0 m Aug 28, 2012 Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14

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