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UPA2739T1A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UPA2739T1A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 3000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: HVSON
 

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UPA2739T1A Datasheet (PDF)

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UPA2739T1A

Data SheetPA2739T1A P-channel MOSFET R07DS0885EJ0102Rev.1.0230 V, 85 A, 2.8 m Nov 28, 2012Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG

 8.1. Size:265K  renesas
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UPA2739T1A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:193K  renesas
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UPA2739T1A

Data SheetPA2736GR P-channel MOSFET R07DS0868EJ0100Rev.1.0030 V, 14 A, 7.0 m Aug 28, 2012Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14

 8.3. Size:181K  renesas
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UPA2739T1A

Data SheetPA2735GR P-channel MOSFET R07DS0867EJ0100Rev.1.0030 V, 16 A, 5.0 m Aug 28, 2012Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16

Otros transistores... UPA2732T1A , UPA2732UT1A , UPA2733GR , UPA2734GR , UPA2735GR , UPA2736GR , UPA2737GR , UPA2738GR , IRF1407 , UPA2742GR , UPA2743T1A , UPA2750GR , UPA2751GR , UPA2752GR , UPA2753GR , UPA2754GR , UPA2755AGR .

History: JCS12N65SEI | KI5404BDC | IRF3805PBF | AOB482L | GM3402 | NCE50NF130D | MCAC16N03-TP

 

 
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