UPA2739T1A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2739T1A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 140 nS
Cossⓘ - Capacitancia de salida: 3000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
Paquete / Cubierta: HVSON
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UPA2739T1A Datasheet (PDF)
upa2739t1a.pdf

Data SheetPA2739T1A P-channel MOSFET R07DS0885EJ0102Rev.1.0230 V, 85 A, 2.8 m Nov 28, 2012Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG
upa2734gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2736gr.pdf

Data SheetPA2736GR P-channel MOSFET R07DS0868EJ0100Rev.1.0030 V, 14 A, 7.0 m Aug 28, 2012Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14
upa2735gr.pdf

Data SheetPA2735GR P-channel MOSFET R07DS0867EJ0100Rev.1.0030 V, 16 A, 5.0 m Aug 28, 2012Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16
Otros transistores... UPA2732T1A , UPA2732UT1A , UPA2733GR , UPA2734GR , UPA2735GR , UPA2736GR , UPA2737GR , UPA2738GR , IRF1407 , UPA2742GR , UPA2743T1A , UPA2750GR , UPA2751GR , UPA2752GR , UPA2753GR , UPA2754GR , UPA2755AGR .
History: JCS12N65SEI | KI5404BDC | IRF3805PBF | AOB482L | GM3402 | NCE50NF130D | MCAC16N03-TP
History: JCS12N65SEI | KI5404BDC | IRF3805PBF | AOB482L | GM3402 | NCE50NF130D | MCAC16N03-TP



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