UPA2739T1A Todos los transistores

 

UPA2739T1A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: UPA2739T1A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 85 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   Qgⓘ - Carga de la puerta: 153 nC
   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 3000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: HVSON

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UPA2739T1A Datasheet (PDF)

 ..1. Size:139K  renesas
upa2739t1a.pdf

UPA2739T1A
UPA2739T1A

Data SheetPA2739T1A P-channel MOSFET R07DS0885EJ0102Rev.1.0230 V, 85 A, 2.8 m Nov 28, 2012Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG

 8.1. Size:265K  renesas
upa2734gr.pdf

UPA2739T1A
UPA2739T1A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:193K  renesas
upa2736gr.pdf

UPA2739T1A
UPA2739T1A

Data SheetPA2736GR P-channel MOSFET R07DS0868EJ0100Rev.1.0030 V, 14 A, 7.0 m Aug 28, 2012Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14

 8.3. Size:181K  renesas
upa2735gr.pdf

UPA2739T1A
UPA2739T1A

Data SheetPA2735GR P-channel MOSFET R07DS0867EJ0100Rev.1.0030 V, 16 A, 5.0 m Aug 28, 2012Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16

 8.4. Size:260K  renesas
upa2732ut1a.pdf

UPA2739T1A
UPA2739T1A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:261K  renesas
upa2732t1a.pdf

UPA2739T1A
UPA2739T1A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:260K  renesas
upa2731ut1a.pdf

UPA2739T1A
UPA2739T1A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:191K  renesas
upa2737gr.pdf

UPA2739T1A
UPA2739T1A

Data SheetPA2737GR P-channel MOSFET R07DS0869EJ0100Rev.1.0030 V, 11 A, 13 m Aug 28, 2012Description The PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 13 m MAX. (VGS = -10 V, ID = -11 A)

 8.8. Size:208K  renesas
upa2730tp.pdf

UPA2739T1A
UPA2739T1A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:192K  renesas
upa2738gr.pdf

UPA2739T1A
UPA2739T1A

Data SheetPA2738GR P-channel MOSFET R07DS0870EJ0100Rev.1.0030 V, 10 A, 15 m Aug 28, 2012Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)

 8.10. Size:148K  nec
upa2733gr.pdf

UPA2739T1A
UPA2739T1A

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2733GRSWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5designed for power management applications of notebook 1, 2, 3 : Source4 : Gatecomputers and so on. 5, 6, 7, 8: DrainFEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M

 8.11. Size:178K  nec
upa2731t1a.pdf

UPA2739T1A
UPA2739T1A

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2731T1ASWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 18battery protection circuit. 2 73 6FEATURES 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 3.

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