UPA2754GR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2754GR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45 nS
Cossⓘ - Capacitancia de salida: 385 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0145 Ohm
Paquete / Cubierta: SOP-8
Búsqueda de reemplazo de MOSFET UPA2754GR
Principales características: UPA2754GR
upa2754gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2757gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2757GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2757GR is Dual N-channel MOS Field Effect 8 5 Transistors designed for switching application. 1 Source 1 2 Gate 1 7, 8 Drain 1 FEATURES 3 Source 2 4 Gate 2 Low on-state resistance 5, 6 Drain 2 RDS(on)1 = 36.0 m MAX. (VGS = 10
upa2753gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2753GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2753GR is Dual N-Channel MOS Field Effect 8 5 Transistor designed for DC/DC converters and power 1 ; Source 1 management applications of notebook computers. 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 FEATURES 4 ; Gate 2 Dual chip type 5,
upa2756gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 5 1 Source 1 2 Gate 1 FEATURES 7, 8 Drain 1 3 Source 2 Low on-state resistance 4 Gate 2 RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0
Otros transistores... UPA2738GR , UPA2739T1A , UPA2742GR , UPA2743T1A , UPA2750GR , UPA2751GR , UPA2752GR , UPA2753GR , 2SK3568 , UPA2755AGR , UPA2755GR , UPA2756GR , UPA2757GR , UPA2761UGR , UPA2762UGR , UPA2763 , UPA2764T1A .
History: AGMH10P15C
History: AGMH10P15C
Liste
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