UPA2780GR Datasheet. Equivalente

 ..1. Size:192K  renesas
 upa2780gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:60K  nec
 upa2781gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2781GR is N-channel Power MOSFET, which built a 85 Schottky Barrier Diode inside. 1, 2, 3 Source This product is designed for synchronous DC/DC converter 4 Gate 5, 6, 7, 8 Drain application. FEATURES Buil

 8.2. Size:66K  nec
 upa2782gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2782GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. 8 5 This product is designed for synchronous DC/DC converter 1, 2, 3 ; Source application. 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Bui

 9.1. Size:269K  renesas
 upa2719agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:270K  renesas
 upa2717gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.3. Size:268K  renesas
 upa2720agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.4. Size:237K  renesas
 upa2763.pdf

Preliminary Data Sheet PA2763 R07DS0003EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A)

 9.5. Size:205K  renesas
 upa2706gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:265K  renesas
 upa2734gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:139K  renesas
 upa2739t1a.pdf

Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 30 V, 85 A, 2.8 m Nov 28, 2012 Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG

 9.8. Size:188K  renesas
 upa2702gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.9. Size:265K  renesas
 upa2718gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.10. Size:193K  renesas
 upa2736gr.pdf

Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 30 V, 14 A, 7.0 m Aug 28, 2012 Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14

 9.11. Size:181K  renesas
 upa2735gr.pdf

Data Sheet PA2735GR P-channel MOSFET R07DS0867EJ0100 Rev.1.00 30 V, 16 A, 5.0 m Aug 28, 2012 Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16

 9.12. Size:198K  renesas
 upa2761ugr.pdf

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A

 9.13. Size:342K  renesas
 upa2794agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.14. Size:140K  renesas
 upa2766t1a.pdf

Data Sheet PA2766T1A N-channel MOSFET R07DS0883EJ0102 Rev.1.02 30 V , 130 A , 0.88 m Nov 28, 2012 Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4

 9.15. Size:253K  renesas
 upa2709agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.16. Size:260K  renesas
 upa2732ut1a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.17. Size:267K  renesas
 upa2719gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.18. Size:261K  renesas
 upa2732t1a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.19. Size:189K  renesas
 upa2700gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.20. Size:198K  renesas
 upa2701gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.21. Size:343K  renesas
 upa2792agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.22. Size:274K  renesas
 upa2770gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.23. Size:260K  renesas
 upa2731ut1a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.24. Size:191K  renesas
 upa2737gr.pdf

Data Sheet PA2737GR P-channel MOSFET R07DS0869EJ0100 Rev.1.00 30 V, 11 A, 13 m Aug 28, 2012 Description The PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 13 m MAX. (VGS = -10 V, ID = -11 A)

 9.25. Size:271K  renesas
 upa2718agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.26. Size:140K  renesas
 upa2765t1a.pdf

Data Sheet PA2765T1A N-channel MOSFET R07DS0882EJ0102 Rev.1.02 30 V , 100 A , 1.3 m Nov 28, 2012 Description The PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 1.3 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.9 m MAX. (VGS = 4.5

 9.27. Size:266K  renesas
 upa2717agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.28. Size:272K  renesas
 upa2721gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.29. Size:343K  renesas
 upa2794gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.30. Size:275K  renesas
 upa2716gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.31. Size:342K  renesas
 upa2793agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.32. Size:248K  renesas
 upa2715gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.33. Size:319K  renesas
 upa2790gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.34. Size:208K  renesas
 upa2730tp.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.35. Size:199K  renesas
 upa2762ugr.pdf

Preliminary Data Sheet PA2762UGR R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 13.5 m MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 = 22 m MAX. (VGS = 4.5 V, ID = 10

 9.36. Size:355K  renesas
 upa2791gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.37. Size:138K  renesas
 upa2764t1a.pdf

Data Sheet PA2764T1A N-channel MOSFET R07DS0881EJ0102 Rev.1.02 30 V , 130 A , 1.10 m Nov 28, 2012 Description The PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 1.10 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.45 m MAX. (VGS = 4

 9.38. Size:250K  renesas
 upa2709gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.39. Size:192K  renesas
 upa2738gr.pdf

Data Sheet PA2738GR P-channel MOSFET R07DS0870EJ0100 Rev.1.00 30 V, 10 A, 15 m Aug 28, 2012 Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)

 9.40. Size:263K  renesas
 upa2721agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.41. Size:343K  renesas
 upa2793gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.42. Size:257K  renesas
 upa2728gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.43. Size:345K  renesas
 upa2792gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.44. Size:148K  nec
 upa2733gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5 designed for power management applications of notebook 1, 2, 3 Source 4 Gate computers and so on. 5, 6, 7, 8 Drain FEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M

 9.45. Size:177K  nec
 upa2723ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2723UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. 1 8 2 7 FEATURES 3 6 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 2.5 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 m

 9.46. Size:85K  nec
 upa2714gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2714GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2714GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook 8 5 computers and Li-ion battery protection circuit. 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Low on-state resistance

 9.47. Size:182K  nec
 upa2722ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2722UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 2 7 FEATURES 3 6 Low on-state resistance 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 4.6 m MAX. (VGS = 4.5 V, ID = 15

 9.48. Size:143K  nec
 upa2707gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2707GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The PA2707GR is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for DC/DC converter and power PA2707GR-E1 Power SOP8 management applications of notebook computer. PA2707GR-E1-A Note Power SOP8 FEATURES PA2707GR-E2 Power SO

 9.49. Size:178K  nec
 upa2724t1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 5.0 m MAX. (VGS = 4.5 V, ID = 15 A)

 9.50. Size:100K  nec
 upa2712gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2712GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2712GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook 8 5 computers and Li-ion battery protection circuit. 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Low on-state resistance

 9.51. Size:184K  nec
 upa2757gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2757GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2757GR is Dual N-channel MOS Field Effect 8 5 Transistors designed for switching application. 1 Source 1 2 Gate 1 7, 8 Drain 1 FEATURES 3 Source 2 4 Gate 2 Low on-state resistance 5, 6 Drain 2 RDS(on)1 = 36.0 m MAX. (VGS = 10

 9.52. Size:178K  nec
 upa2725ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2725UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 5.0 m MAX. (VGS = 10 V, ID = 13 A) 6 0.2 0.10 S RDS(on)2 = 7.5 m MAX. (VGS = 4.5 V, ID = 13 A)

 9.53. Size:136K  nec
 upa2708gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2708GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The PA2708GR is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for DC/DC converter and power PA2708GR-E1 Power SOP8 management applications of notebook computer. PA2708GR-E2 Power SOP8 FEATURES PA2708GR-E1-A Note Power SOP

 9.54. Size:66K  nec
 upa2753gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2753GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2753GR is Dual N-Channel MOS Field Effect 8 5 Transistor designed for DC/DC converters and power 1 ; Source 1 management applications of notebook computers. 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 FEATURES 4 ; Gate 2 Dual chip type 5,

 9.55. Size:176K  nec
 upa2727t1a.pdf

 9.56. Size:85K  nec
 upa2713gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2713GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook 85 1, 2, 3 Source computers and Li-ion battery protection circuit. 4 Gate 5, 6, 7, 8 Drain FEATURES Low on-state resistance RDS

 9.57. Size:166K  nec
 upa2716agr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2716AGR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2716AGR is P-Channel MOS Field Effect 8 5 Transistor designed for power management applications of 1, 2, 3 Source 4 Gate notebook computers and Lithium-Ion battery protection circuit. 5, 6, 7, 8 Drain FEATURES Low on-state resistan

 9.58. Size:178K  nec
 upa2731t1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2731T1A SWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 1 8 battery protection circuit. 2 7 3 6 FEATURES 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 3.

 9.59. Size:172K  nec
 upa2726ut1a.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 7.0 m MAX. (VGS = 10 V, ID = 10 A) 6 0.2 0.10 S RDS(on)2 = 11.0 m MAX. (VGS = 4.5 V, ID = 10 A

 9.60. Size:164K  nec
 upa2742gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2742GR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2742GR is N-channel MOS Field Effect Transistor 8 5 designed for power management applications of a notebook 1, 2, 3 Source computer. 4 Gate 5, 6, 7, 8 Drain FEATURES Low on-state resistance RDS(on)1 = 4.8 m MAX. (VGS = 10 V, ID

 9.61. Size:143K  nec
 upa2756gr.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 5 1 Source 1 2 Gate 1 FEATURES 7, 8 Drain 1 3 Source 2 Low on-state resistance 4 Gate 2 RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0

 9.62. Size:235K  rohm
 upa2751gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.63. Size:202K  rohm
 upa2754gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.64. Size:194K  rohm
 upa2750gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.65. Size:217K  rohm
 upa2755gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.66. Size:208K  rohm
 upa2752gr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.67. Size:266K  rohm
 upa2743t1a.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.68. Size:274K  rohm
 upa2755agr.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.