UPA2782GR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2782GRSWITCHINGN-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODEDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA2782GR is N-Channel Power MOSFET, which built aSchottky Barrier Diode inside.8 5 This product is designed for synchronous DC/DC converter1, 2, 3 ; Sourceapplication. 4 ; Gate5, 6, 7, 8 ; DrainFEATURES Bui

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2781GR SWITCHINGN-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODEDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2781GR is N-channel Power MOSFET, which built a85Schottky Barrier Diode inside.1, 2, 3 : Source This product is designed for synchronous DC/DC converter 4 : Gate5, 6, 7, 8: Drainapplication.FEATURES Buil

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet PA2763 R07DS0003EJ0100Rev.1.00May 31, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2739T1A P-channel MOSFET R07DS0885EJ0102Rev.1.0230 V, 85 A, 2.8 m Nov 28, 2012Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2736GR P-channel MOSFET R07DS0868EJ0100Rev.1.0030 V, 14 A, 7.0 m Aug 28, 2012Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14

Data SheetPA2735GR P-channel MOSFET R07DS0867EJ0100Rev.1.0030 V, 16 A, 5.0 m Aug 28, 2012Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16

Preliminary Data Sheet PA2761UGR R07DS0010EJ0100Rev.1.00Jun 01, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2766T1A N-channel MOSFET R07DS0883EJ0102Rev.1.0230 V , 130 A , 0.88 m Nov 28, 2012Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2737GR P-channel MOSFET R07DS0869EJ0100Rev.1.0030 V, 11 A, 13 m Aug 28, 2012Description The PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 13 m MAX. (VGS = -10 V, ID = -11 A)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2765T1A N-channel MOSFET R07DS0882EJ0102Rev.1.0230 V , 100 A , 1.3 m Nov 28, 2012Description The PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 1.3 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.9 m MAX. (VGS = 4.5

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Preliminary Data Sheet PA2762UGR R07DS0011EJ0100Rev.1.00Jun 01, 2010MOS FIELD EFFECT TRANSISTOR Description The PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 13.5 m MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 = 22 m MAX. (VGS = 4.5 V, ID = 10

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2764T1A N-channel MOSFET R07DS0881EJ0102Rev.1.0230 V , 130 A , 1.10 m Nov 28, 2012Description The PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25C) Low on-state resistance RDS(on) = 1.10 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.45 m MAX. (VGS = 4

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data SheetPA2738GR P-channel MOSFET R07DS0870EJ0100Rev.1.0030 V, 10 A, 15 m Aug 28, 2012Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2733GRSWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5designed for power management applications of notebook 1, 2, 3 : Source4 : Gatecomputers and so on. 5, 6, 7, 8: DrainFEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2723UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. 182 7FEATURES 3 64 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 2.5 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 m

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2714GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA2714GR is P-Channel MOS Field Effect Transistordesigned for power management applications of notebook8 5computers and Li-ion battery protection circuit.1, 2, 3 ; Source4 ; Gate5, 6, 7, 8 ; DrainFEATURES Low on-state resistance

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2722UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2722UT1A is N-channel MOSFET designed for DC/DC converter applications. 182 7FEATURES 3 6 Low on-state resistance 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 4.6 m MAX. (VGS = 4.5 V, ID = 15

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2707GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The PA2707GR is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for DC/DC converter and power PA2707GR-E1 Power SOP8management applications of notebook computer. PA2707GR-E1-A Note Power SOP8 FEATURES PA2707GR-E2 Power SO

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2724UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 64 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 5.0 m MAX. (VGS = 4.5 V, ID = 15 A)

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2712GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTIONPACKAGE DRAWING (Unit: mm) The PA2712GR is P-Channel MOS Field Effect Transistordesigned for power management applications of notebook8 5computers and Li-ion battery protection circuit.1, 2, 3 ; Source4 ; Gate5, 6, 7, 8 ; DrainFEATURES Low on-state resistance

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2757GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2757GR is Dual N-channel MOS Field Effect 8 5Transistors designed for switching application. 1 : Source 12 : Gate 17, 8 : Drain 1FEATURES 3 : Source 24 : Gate 2 Low on-state resistance 5, 6 : Drain 2RDS(on)1 = 36.0 m MAX. (VGS = 10

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2725UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2725UT1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 64 5 RDS(on)1 = 5.0 m MAX. (VGS = 10 V, ID = 13 A) 6 0.2 0.10 S RDS(on)2 = 7.5 m MAX. (VGS = 4.5 V, ID = 13 A)

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2708GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The PA2708GR is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for DC/DC converter and power PA2708GR-E1 Power SOP8management applications of notebook computer. PA2708GR-E2 Power SOP8FEATURES PA2708GR-E1-A Note Power SOP

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2753GRSWITCHINGN-CHANNEL POWER MOS FETDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2753GR is Dual N-Channel MOS Field Effect8 5Transistor designed for DC/DC converters and power1 ; Source 1management applications of notebook computers.2 ; Gate 17, 8 ; Drain 13 ; Source 2FEATURES4 ; Gate 2 Dual chip type 5,

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2727T1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2727T1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 6 RDS(on)1 = 9.6 m MAX. (VGS = 10 V, ID = 8 A) 4 5 RDS(on)2 = 15 m MAX. (VGS = 4.5 V, ID = 8 A) 6 0.2 0.10 S

DATA SHEETMOS FIELD EFFECT TRANSISTORPA2713GRSWITCHINGP-CHANNEL POWER MOS FETDESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2713GR is P-channel MOS Field Effect Transistordesigned for power management applications of notebook 851, 2, 3 : Sourcecomputers and Li-ion battery protection circuit.4 : Gate5, 6, 7, 8: DrainFEATURES Low on-state resistanceRDS

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2716AGRSWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2716AGR is P-Channel MOS Field Effect8 5Transistor designed for power management applications of 1, 2, 3 : Source4 : Gatenotebook computers and Lithium-Ion battery protection circuit. 5, 6, 7, 8 : Drain FEATURES Low on-state resistan

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2731T1ASWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 18battery protection circuit. 2 73 6FEATURES 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 3.

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2726UT1ASWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit: mm) DESCRIPTION The PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. 18FEATURES 2 7 Low on-state resistance 3 64 5 RDS(on)1 = 7.0 m MAX. (VGS = 10 V, ID = 10 A) 6 0.2 0.10 S RDS(on)2 = 11.0 m MAX. (VGS = 4.5 V, ID = 10 A

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2742GRSWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2742GR is N-channel MOS Field Effect Transistor 8 5designed for power management applications of a notebook 1, 2, 3 : Sourcecomputer. 4 : Gate5, 6, 7, 8: DrainFEATURES Low on-state resistance RDS(on)1 = 4.8 m MAX. (VGS = 10 V, ID

DATA SHEETMOS FIELD EFFECT TRANSISTOR PA2756GRSWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 51 : Source 12 : Gate 1FEATURES 7, 8: Drain 13 : Source 2 Low on-state resistance 4 : Gate 2 RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.