UPA2782GR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UPA2782GR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Encapsulados: SOP-8
Búsqueda de reemplazo de UPA2782GR MOSFET
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UPA2782GR datasheet
upa2782gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2782GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2782GR is N-Channel Power MOSFET, which built a Schottky Barrier Diode inside. 8 5 This product is designed for synchronous DC/DC converter 1, 2, 3 ; Source application. 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Bui
upa2780gr.pdf
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upa2781gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2781GR SWITCHING N-CHANNEL POWER MOS FET/SCHOTTKY BARRIER DIODE DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2781GR is N-channel Power MOSFET, which built a 85 Schottky Barrier Diode inside. 1, 2, 3 Source This product is designed for synchronous DC/DC converter 4 Gate 5, 6, 7, 8 Drain application. FEATURES Buil
upa2719agr.pdf
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upa2717gr.pdf
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upa2763.pdf
Preliminary Data Sheet PA2763 R07DS0003EJ0100 Rev.1.00 May 31, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance RDS(on)1 = 23.0 m MAX. (VGS = 10 V, ID = 21 A) RDS(on)2 = 28.0 m MAX. (VGS = 8 V, ID = 21 A)
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upa2739t1a.pdf
Data Sheet PA2739T1A P-channel MOSFET R07DS0885EJ0102 Rev.1.02 30 V, 85 A, 2.8 m Nov 28, 2012 Description The PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.8 m MAX. (VGS = -10 V, ID = -46 A) RDS(on) = 5.7 m MAX. (VG
upa2702gr.pdf
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upa2718gr.pdf
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upa2736gr.pdf
Data Sheet PA2736GR P-channel MOSFET R07DS0868EJ0100 Rev.1.00 30 V, 14 A, 7.0 m Aug 28, 2012 Description The PA2736GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 7.0 m MAX. (VGS = -10 V, ID = -14
upa2735gr.pdf
Data Sheet PA2735GR P-channel MOSFET R07DS0867EJ0100 Rev.1.00 30 V, 16 A, 5.0 m Aug 28, 2012 Description The PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.0 m MAX. (VGS = -10 V, ID = -16
upa2761ugr.pdf
Preliminary Data Sheet PA2761UGR R07DS0010EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2761UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 18.5 m MAX. (VGS = 10 V, ID = 9 A) RDS(on)2 = 30 m MAX. (VGS = 4.5 V, ID = 7 A
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upa2766t1a.pdf
Data Sheet PA2766T1A N-channel MOSFET R07DS0883EJ0102 Rev.1.02 30 V , 130 A , 0.88 m Nov 28, 2012 Description The PA2766T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 0.88 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 1.82 m MAX. (VGS = 4
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upa2732ut1a.pdf
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upa2719gr.pdf
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upa2732t1a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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upa2731ut1a.pdf
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upa2737gr.pdf
Data Sheet PA2737GR P-channel MOSFET R07DS0869EJ0100 Rev.1.00 30 V, 11 A, 13 m Aug 28, 2012 Description The PA2737GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 13 m MAX. (VGS = -10 V, ID = -11 A)
upa2718agr.pdf
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upa2765t1a.pdf
Data Sheet PA2765T1A N-channel MOSFET R07DS0882EJ0102 Rev.1.02 30 V , 100 A , 1.3 m Nov 28, 2012 Description The PA2765T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 1.3 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.9 m MAX. (VGS = 4.5
upa2717agr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2721gr.pdf
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upa2794gr.pdf
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upa2716gr.pdf
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upa2793agr.pdf
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upa2762ugr.pdf
Preliminary Data Sheet PA2762UGR R07DS0011EJ0100 Rev.1.00 Jun 01, 2010 MOS FIELD EFFECT TRANSISTOR Description The PA2762UGR is N-Channel MOS Field Effect Transistor designed for power management applications of a notebook computer. Features Low on-state resistance RDS(on)1 = 13.5 m MAX. (VGS = 10 V, ID = 12 A) RDS(on)2 = 22 m MAX. (VGS = 4.5 V, ID = 10
upa2791gr.pdf
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upa2764t1a.pdf
Data Sheet PA2764T1A N-channel MOSFET R07DS0881EJ0102 Rev.1.02 30 V , 130 A , 1.10 m Nov 28, 2012 Description The PA2764T1A is N-channel MOS Field Effect Transistor designed for high current switching application. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 1.10 m MAX. (VGS = 10 V, ID = 46 A) RDS(on) = 2.45 m MAX. (VGS = 4
upa2709gr.pdf
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upa2738gr.pdf
Data Sheet PA2738GR P-channel MOSFET R07DS0870EJ0100 Rev.1.00 30 V, 10 A, 15 m Aug 28, 2012 Description The PA2738GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. Features VDSS = -30 V (TA = 25 C) Low on-state resistance RDS(on) = 15 m MAX. (VGS = -10 V, ID = -10 A)
upa2721agr.pdf
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upa2793gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2728gr.pdf
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upa2792gr.pdf
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upa2733gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2733GR SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2733GR is P-channel MOS Field Effect Transistor 8 5 designed for power management applications of notebook 1, 2, 3 Source 4 Gate computers and so on. 5, 6, 7, 8 Drain FEATURES Low on-state resistance 6.0 0.3 RDS(on)1 = 38 m M
upa2723ut1a.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2723UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2723UT1A is N-channel MOSFET designed for low side device of synchronous rectifier DC/DC converter. 1 8 2 7 FEATURES 3 6 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 2.5 m MAX. (VGS = 10 V, ID = 17 A) RDS(on)2 = 3.5 m
upa2714gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2714GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2714GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook 8 5 computers and Li-ion battery protection circuit. 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Low on-state resistance
upa2722ut1a.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2722UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2722UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 2 7 FEATURES 3 6 Low on-state resistance 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 4.6 m MAX. (VGS = 4.5 V, ID = 15
upa2707gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2707GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The PA2707GR is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for DC/DC converter and power PA2707GR-E1 Power SOP8 management applications of notebook computer. PA2707GR-E1-A Note Power SOP8 FEATURES PA2707GR-E2 Power SO
upa2724t1a.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2724UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2724UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 3.3 m MAX. (VGS = 10 V, ID = 15 A) 6 0.2 0.10 S RDS(on)2 = 5.0 m MAX. (VGS = 4.5 V, ID = 15 A)
upa2712gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2712GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2712GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook 8 5 computers and Li-ion battery protection circuit. 1, 2, 3 ; Source 4 ; Gate 5, 6, 7, 8 ; Drain FEATURES Low on-state resistance
upa2757gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2757GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2757GR is Dual N-channel MOS Field Effect 8 5 Transistors designed for switching application. 1 Source 1 2 Gate 1 7, 8 Drain 1 FEATURES 3 Source 2 4 Gate 2 Low on-state resistance 5, 6 Drain 2 RDS(on)1 = 36.0 m MAX. (VGS = 10
upa2725ut1a.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2725UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2725UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 5.0 m MAX. (VGS = 10 V, ID = 13 A) 6 0.2 0.10 S RDS(on)2 = 7.5 m MAX. (VGS = 4.5 V, ID = 13 A)
upa2708gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2708GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The PA2708GR is N-channel MOS Field Effect PART NUMBER PACKAGE Transistor designed for DC/DC converter and power PA2708GR-E1 Power SOP8 management applications of notebook computer. PA2708GR-E2 Power SOP8 FEATURES PA2708GR-E1-A Note Power SOP
upa2753gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2753GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2753GR is Dual N-Channel MOS Field Effect 8 5 Transistor designed for DC/DC converters and power 1 ; Source 1 management applications of notebook computers. 2 ; Gate 1 7, 8 ; Drain 1 3 ; Source 2 FEATURES 4 ; Gate 2 Dual chip type 5,
upa2713gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2713GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2713GR is P-channel MOS Field Effect Transistor designed for power management applications of notebook 85 1, 2, 3 Source computers and Li-ion battery protection circuit. 4 Gate 5, 6, 7, 8 Drain FEATURES Low on-state resistance RDS
upa2716agr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2716AGR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2716AGR is P-Channel MOS Field Effect 8 5 Transistor designed for power management applications of 1, 2, 3 Source 4 Gate notebook computers and Lithium-Ion battery protection circuit. 5, 6, 7, 8 Drain FEATURES Low on-state resistan
upa2731t1a.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2731T1A SWITCHING P-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2731T1A is P-channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion 1 8 battery protection circuit. 2 7 3 6 FEATURES 4 5 Low on-state resistance 6 0.2 0.10 S RDS(on)1 = 3.
upa2726ut1a.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2726UT1A SWITCHING N-CHANNEL POWER MOSFET PACKAGE DRAWING (Unit mm) DESCRIPTION The PA2726UT1A is N-channel MOSFET designed for DC/DC converter applications. 1 8 FEATURES 2 7 Low on-state resistance 3 6 4 5 RDS(on)1 = 7.0 m MAX. (VGS = 10 V, ID = 10 A) 6 0.2 0.10 S RDS(on)2 = 11.0 m MAX. (VGS = 4.5 V, ID = 10 A
upa2742gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2742GR SWITCHING N-CHANNEL POWER MOSFET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2742GR is N-channel MOS Field Effect Transistor 8 5 designed for power management applications of a notebook 1, 2, 3 Source computer. 4 Gate 5, 6, 7, 8 Drain FEATURES Low on-state resistance RDS(on)1 = 4.8 m MAX. (VGS = 10 V, ID
upa2756gr.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2756GR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit mm) The PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. 8 5 1 Source 1 2 Gate 1 FEATURES 7, 8 Drain 1 3 Source 2 Low on-state resistance 4 Gate 2 RDS(on)1 = 105 m MAX. (VGS = 10 V, ID = 2.0
upa2751gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2754gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2750gr.pdf
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upa2755gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2752gr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2743t1a.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
upa2755agr.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... UPA2762UGR, UPA2763, UPA2764T1A, UPA2765T1A, UPA2766T1A, UPA2770GR, UPA2780GR, UPA2781GR, P60NF06, UPA2790GR, UPA2791GR, UPA2792AGR, UPA2792GR, UPA2793AGR, UPA2793GR, UPA2794AGR, UPA2794GR
History: IRFS460
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