UPA2820T1S Todos los transistores

 ..1. Size:189K  renesas
 upa2820t1s.pdf

Preliminary Data Sheet PA2820T1S R07DS0751EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2820T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 5.3 m MAX. (VGS

 8.1. Size:192K  renesas
 upa2825t1s.pdf

Preliminary Data Sheet PA2825T1S R07DS0755EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2825T1S is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 4.6 m MAX. (VGS

 8.2. Size:138K  renesas
 upa2822t1l.pdf

Data Sheet PA2822T1L R07DS0754EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2822T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 2.6 m MAX. (VGS = 10 V, ID =

 8.3. Size:143K  renesas
 upa2821t1l.pdf

PreliminaryData Sheet PA2821T1L R07DS0753EJ0100 Rev.1.00 May 25, 2012 MOS FIELD EFFECT TRANSISTOR Description The PA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit. Features VDSS = 30 V (TA = 25 C) Low on-state resistance RDS(on) = 3.8 m MAX. (VGS

 8.4. Size:209K  renesas
 upa2826t1s.pdf

Data Sheet PA2826T1S N-channel MOSFET R07DS0989EJ0100 Rev.1.00 20 V , 27 A , 4.3 m Dec 25, 2012 Description The PA2826T1S is N-channel MOS Field Effect Transistor designed for power management applications of portable equipment . Features VDSS = 20 V (TA = 25 C) Low on-state resistance RDS(on) = 4.3 m MAX. (VGS = 8.0 V, ID = 13.5 A) 2.5 V Gate-d